Products - Power
設(shè)計(jì)考慮因素
- 開(kāi)始采用PWM驅(qū)動(dòng)無(wú)刷直流電機(jī)控制
- 電機(jī)驅(qū)動(dòng)MOSFET必須以低RDSon和良好的熱阻抗來(lái)滿足峰值高電流需求
- 如果過(guò)載情況會(huì)降低電池和柵極電壓,則可能需要具有強(qiáng)線性模式性能的MOSFET來(lái)提供反向電池保護(hù)
- MOSFET可能需要滿足UL2595等的具體間距要求
- 為小尺寸優(yōu)化的電荷平衡MOSFET,通常裝在可移動(dòng)電池組中——每個(gè)電池一個(gè)
MOSFET and GaN FET Handbook
Drawing on over 20 years’ of experience, the MOSFET and GaN FET Application Handbook: A Power Design Engineer’s Guide brings together a comprehensive set of learning and reference materials relating to the use of MOSFETs and GaN FETs in real world systems.