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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認證產(chǎn)品(AEC-Q100/Q101)

LFPAK88 MOSFETs

LFPAK88 MOSFETs

Key features

  • 8 mm x 8 mm footprint
  • 48 x power-density compared to wire bonded equivalents
  • Advanced package design exceeds 2 x AEC-Q101
  • Ultra low On-Resistance
  • Copper clip technology gives low electrical and thermal resistance
  • Best-in-class linear mode (SOA) performance in-rush and surge protection


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Target applications

The versatility of the LFPAK88 makes it suitable for a wide variety of applications

Automotive

Industrial

  • Battery-powered power tools
  • Power supply equipment
  • Telecom infrastructure

Space efficiency

The compact 8 mm x 8 mm footprint of the LFPAK88 provides market-leading space efficiency, with up to 60% footprint saving compared to D2PAK and D2PAK-7 alternatives. In addition, it’s 1.6 mm height increases the overall space efficiency to 86%.



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LFPAK88 video

Building on over 15 years experience in copper-clip package production, Nexperia enhances the market-leading LFPAK range with the addition of LFPAK88. Providing up to 48 times power density compared to wire bond alternatives, and the robust and reliable characteristics synonymous with Nexperia’s LFPAK technology, LFPAK88 is ideally suited for high-power industrial applications. Also qualified to AEC-Q101 standards it provides the perfect solution for automotive power steering, reverse battery protection, and DC/DC conversion applications.



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LFPAK88 video

LFPAK88 Blog

As the industry demands more space savings, power density and current handling capabilities, Nexperia’s latest copper clip package delivers significant improvements. Combining low RDSon and high ID, the LFPAK88 sets the benchmark for power density to over 1 W/mm3.



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LFPAK88 blog

主要特性和優(yōu)勢

Features and benefits

  • 8mm x 8mm footprint
  • 23x power-density compared to wire bonded equivalents
  • Advanced package design exceeds 2x AEC-Q101
  • Ultra low On-Resistance
  • Copper clip technology gives low electrical and thermal resistance
  • Best-in-class linear mode (SOA) performance in-rush and surge protection

關(guān)鍵應(yīng)用

Applications

The versatility of the LFPAK88 makes it suitable for a wide variety of applications

Automotive

  • Power steering
  • ABS breaking
  • DC/DC conversion
  • Reverse battery protection
  • Auxiliary Valves

Industrial

  • Battery-powered power tools
  • Power supply equipment
  • Telecom infrastructure

Parametric search

LFPAK88 MOSFETs
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Products

Automotive qualified products (AEC-Q100/Q101)

型號 描述 狀態(tài) 快速訪問
BUK7S1R2-40H N-channel 40 V, 1.2 mΩ standard level MOSFET in LFPAK88 Production
BUK7S2R5-40H N-channel 40 V, 2.5 mOhm standard level MOSFET in LFPAK88 Production
BUK7S0R7-40H N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88 Production
BUK7S2R0-40H N-channel 40 V, 2 mOhm standard level MOSFET in LFPAK88 Production
BUK7S0R5-40H N-channel 40 V, 0.5 mOhm standard level MOSFET in LFPAK88 Production
BUK7S1R5-40H N-channel 40 V, 1.5 mOhm standard level MOSFET in LFPAK88 Production
BUK7S1R0-40H N-channel 40 V, 1.0 mΩ standard level MOSFET in LFPAK88 Production

MOSFETs

型號 描述 狀態(tài) 快速訪問
BUK7S1R2-40H N-channel 40 V, 1.2 mΩ standard level MOSFET in LFPAK88 Production
BUK7S2R5-40H N-channel 40 V, 2.5 mOhm standard level MOSFET in LFPAK88 Production
BUK7S0R7-40H N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88 Production
BUK7S2R0-40H N-channel 40 V, 2 mOhm standard level MOSFET in LFPAK88 Production
BUK7S0R5-40H N-channel 40 V, 0.5 mOhm standard level MOSFET in LFPAK88 Production
BUK7S1R5-40H N-channel 40 V, 1.5 mOhm standard level MOSFET in LFPAK88 Production
BUK7S1R0-40H N-channel 40 V, 1.0 mΩ standard level MOSFET in LFPAK88 Production
PSMN1R1-50SLH N-channel 50 V, 1.18 mOhm, 280 A logic level MOSFET in LFPAK88 using NextPower-S3 Schottky-Plus technology EndOfLife
PSMNR90-50SLH N-channel 50 V, 0.90 mOhm, 410 A logic level Application Specific MOSFET in LFPAK88 Production
PSMN1R2-55SLH N-channel 55 V, 1.03 mOhm, 330 A logic level Application Specific MOSFET in LFPAK88 Production
PSMN2R3-100SSE N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88 Production
PSMNR55-40SSH N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production
PSMN2R3-100SSJ N-channel 100 V, 2.3 mOhm ASFET with enhanced dynamic current sharing in LFPAK88 Development
PSMN1R9-80SSE N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88 Production
PSMN2R5-80SSE N-channel 80 V, 2.5 mOhm MOSFET with enhanced SOA in LFPAK88 Production
PSMN2R9-100SSE N-channel 100 V, 2.9 mOhm MOSFET with enhanced SOA in LFPAK88 Production
PSMN1R0-40SSH N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production
PSMN2R6-100SSF NextPower 100 V, 2.6 mOhm, 200 Amp, N-channel MOSFET in LFPAK88 package Production
PSMN3R3-100SSF NextPower 100 V, 3.3 mOhm, 180 Amp, N-channel MOSFET in LFPAK88 package Production
PSMN2R3-80SSF NextPower 80 V, 2.3 mOhm, 240 Amp, N-channel MOSFET in LFPAK88 package Production
PSMN2R0-100SSF NextPower 100 V, 2.07 mOhm, 267 Amp, N-channel MOSFET in LFPAK88 package Production
PSMNR70-40SSH N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production
PSMN1R8-80SSF NextPower 80 V, 1.8 mOhm, 270 Amp, N-channel MOSFET in LFPAK88 package Production
PSMN2R8-80SSF NextPower 80 V, 2.8 mOhm, 205 Amp, N-channel MOSFET in LFPAK88 package Production
PSMN1R3-80SSF NextPower 80 V, 1.2 mOhm, 335 Amp, N-channel MOSFET in LFPAK88 package Qualification

Documentation

文件名稱 標題 類型 日期
AN11599.pdf Using power MOSFETs in parallel Application note 2016-07-13
LFPAK88_sot1235_mk.png plastic, single-ended surface-mounted package (LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body Marcom graphics 2019-04-10
vp_LFPAK88.zip LFPAK88 MOSFETs Value proposition 2019-05-14
AN90017.pdf Load switches for mobile and computing applications Application note 2020-09-02
AN90016.pdf Maximum continuous currents in NEXPERIA LFPAK power MOSFETs Application note 2020-09-03
nexperia_document_leaflet_LFPAK88_2022.pdf LFPAK88 - Driving power-density to the next level Leaflet 2022-03-09
nexperia_document_leaflet_LFPAK88_2022_CHN.pdf LFPAK88 將功率密度提升到新高度 Leaflet 2022-03-10
AN10273.pdf Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN50013.pdf Thermal performance of power MOSFETs in copper-clip LFPAK88 packages versus bare die Application note 2023-02-18
Nexperia_Selection_guide_2023.pdf Nexperia Selection Guide 2023 Selection guide 2023-05-10
AN90003.pdf LFPAK MOSFET thermal design guide Application note 2023-08-22
TN00008.pdf Power MOSFET frequently asked questions and answers Technical note 2024-08-09
AN11158.pdf Understanding power MOSFET data sheet parameters Application note 2025-02-18

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