可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| GAN111-650WSB | GAN111-650WSBQ | 934666222127 | SOT429-3 | 訂單產(chǎn)品 |
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Click here for more informationGAN111-650WSB
650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package
The GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.
Features and benefits
Ultra-low reverse recovery charge
Simple gate drive (0 V to +10 V or +12 V)
Robust gate oxide (±20 V capability)
High gate threshold voltage (+4 V) for very good gate bounce immunity
Very low source-drain voltage in reverse conduction mode
Transient over-voltage capability
Applications
Hard and soft switching converters for industrial and datacom power
AC/DC Bridgeless totem-pole PFC
DC/DC High-frequency resonant converters
Datacom and telecom (AC/DC and DC/DC) converters
Solar (PV) inverters
Servo motor drives
TV PSU and LED drivers
參數(shù)類型
| 型號 | Package version | Package name | Product status | Configuration | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GAN111-650WSB | SOT429-3 | TO-247-3L | Production | cascode | N | 1 | 650 | 114 | 175 | 21 | 0.8 | 4.9 | 107 | 65 | 4.1 | N | 336 | 49 | 2024-07-03 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| GAN111-650WSB | GAN111-650WSBQ (934666222127) |
Active | GAN111 650WSB |
TO-247-3L (SOT429-3) |
SOT429-3 | 暫無信息 |
Boards
| Part number | Description | Type | Quick links | Shop link |
|---|---|---|---|---|
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描述 The NX-HB-GAN111UL half-bridge evaluation board provides the elements of a simple buck or boost converter. This enables the basic study of the switching characteristics and efficiency achievable with Nexperia’s 650V Cascode GaN FETs. The circuit is configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high / low level inputs. The voltage input and output can operate at up to 400 VDC, with a power output > 2000 Watts.
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類型 Evaluation board
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Quick links
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Shop link
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環(huán)境信息
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| GAN111-650WSB | GAN111-650WSBQ | GAN111-650WSB |
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文檔 (10)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| GAN111-650WSB | 650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package | Data sheet | 2024-06-24 |
| SOT429-3 | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Package information | 2023-12-07 |
| GAN111-650WSB_models_LTspice | GAN111-650WSB LTspice model | SPICE model | 2024-07-22 |
| GAN111-650WSB_models_SIMetrix | GAN111-650WSB SIMetrix model | SPICE model | 2024-07-22 |
| CauerModel_GAN111-650WSB | Cauer model GAN111-650WSB | Thermal model | 2024-07-23 |
| FosterModel_GAN111-650WSB | Foster model GAN111-650WSB | Thermal model | 2024-07-23 |
| GAN111-650WSB | GAN111-650WSB RC thermal model | Thermal model | 2024-07-23 |
| GAN111-650WSB_Cauer | GAN111-650WSB Cauer model | Thermal model | 2024-07-23 |
| GAN111-650WSB_Foster | GAN111-650WSB Foster model | Thermal model | 2024-07-23 |
| UM90045 | NX-HB-GAN111UL 2.0 kW half-bridge evaluation board user guide | User manual | 2024-09-06 |
支持
如果您需要設(shè)計(jì)/技術(shù)支持，請告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| GAN111-650WSB_models_LTspice | GAN111-650WSB LTspice model | SPICE model | 2024-07-22 |
| GAN111-650WSB_models_SIMetrix | GAN111-650WSB SIMetrix model | SPICE model | 2024-07-22 |
| CauerModel_GAN111-650WSB | Cauer model GAN111-650WSB | Thermal model | 2024-07-23 |
| FosterModel_GAN111-650WSB | Foster model GAN111-650WSB | Thermal model | 2024-07-23 |
| GAN111-650WSB | GAN111-650WSB RC thermal model | Thermal model | 2024-07-23 |
| GAN111-650WSB_Cauer | GAN111-650WSB Cauer model | Thermal model | 2024-07-23 |
| GAN111-650WSB_Foster | GAN111-650WSB Foster model | Thermal model | 2024-07-23 |
訂購、定價(jià)與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| GAN111-650WSB | GAN111-650WSBQ | 934666222127 | Active | 暫無信息 | 300 | 訂單產(chǎn)品 |
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
GAN111-650WSB
650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package
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