74AUP1G86GW-Q100

Low-power 2-input EXCLUSIVE-OR gate

Automotive qualified

The 74AUP1G86-Q100 is a single 2-input EXCLUSIVE-OR gate. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire V_CC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using I_OFF. The I_OFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.

Features and benefits

Automotive product qualification in accordance with AEC-Q100 (Grade 1)
- Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Wide supply voltage range from 0.8 V to 3.6 V
CMOS low power dissipation
High noise immunity
Low static power consumption; I_CC = 0.9 μA (maximum)
Overvoltage tolerant inputs to 3.6 V
Low noise overshoot and undershoot < 10 % of V_CC
I_OFF circuitry provides partial power-down mode operation
Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
Complies with JEDEC standards:
- JESD8-12 (0.8 V to 1.3 V)
- JESD8-11 (0.9 V to 1.65 V)
- JESD8-7 (1.2 V to 1.95 V)
- JESD8-5 (1.8 V to 2.7 V)
- JESD8-B (2.7 V to 3.6 V)
ESD protection:
- HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V
- CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

參數(shù)類型

型號	V_CC (V)	Logic switching levels	Output drive capability (mA)	t_pd (ns)	f_max (MHz)	Nr of bits	Power dissipation considerations	T_amb (°C)	R_th(j-a) (K/W)	Ψ_th(j-top) (K/W)	R_th(j-c) (K/W)	Package name
74AUP1G86GW-Q100	0.8?-?3.6	CMOS	± 1.9	9	70	1	ultra low	-40~125	309	79.2	179	TSSOP5

PCB Symbol, Footprint and 3D Model

Model Name	描述

封裝

型號	可訂購的器件編號，（訂購碼(12NC)）	狀態(tài)	標示	封裝	外形圖	回流焊/波峰焊	包裝
74AUP1G86GW-Q100	74AUP1G86GW-Q100H (935305309125)	Active	pH	TSSOP5 (SOT353-1)	SOT353-1	WAVE_BG-BD-1	SOT353-1_125

環(huán)境信息

型號	可訂購的器件編號	化學成分	RoHS	RHF指示符
74AUP1G86GW-Q100	74AUP1G86GW-Q100H	74AUP1G86GW-Q100

品質(zhì)及可靠性免責聲明

Series

文檔 (13)

文件名稱	標題	類型	日期
74AUP1G86_Q100	Low-power 2-input EXCLUSIVE-OR gate	Data sheet	2023-07-14
AN10161	PicoGate Logic footprints	Application note	2002-10-29
AN11052	Pin FMEA for AUP family	Application note	2019-01-09
Nexperia_document_guide_MiniLogic_PicoGate_201901	PicoGate leaded logic portfolio guide	Brochure	2019-01-07
SOT353-1	3D model for products with SOT353-1 package	Design support	2019-09-23
aup1g86	74AUP1G86 IBIS model	IBIS model	2014-12-14
Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904	Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904	Leaflet	2019-04-12
Nexperia_package_poster	Nexperia package poster	Leaflet	2020-05-15
TSSOP5_SOT353-1_mk	plastic, thin shrink small outline package; 5 leads; 0.65 mm pitch; 2 mm x 1.25 mm x 0.95 mm body	Marcom graphics	2018-07-25
SOT353-1	plastic thin shrink small outline package; 5 leads; body width 1.25 mm	Package information	2022-11-15
SOT353-1_125	TSSOP5; Reel pack for SMD, 7"; Q3/T4 product orientation	Packing information	2023-02-21
74AUP1G86GW-Q100_Nexperia_Product_Reliability	74AUP1G86GW-Q100 Nexperia Product Reliability	Quality document	2024-06-16
WAVE_BG-BD-1	Wave soldering profile	Wave soldering	2021-09-08

支持

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模型

文件名稱	標題	類型	日期
aup1g86	74AUP1G86 IBIS model	IBIS model	2014-12-14
SOT353-1	3D model for products with SOT353-1 package	Design support	2019-09-23

PCB Symbol, Footprint and 3D Model

Model Name	描述

訂購、定價與供貨

型號	Orderable part number	Ordering code (12NC)	狀態(tài)	包裝	Packing Quantity	在線購買
74AUP1G86GW-Q100	74AUP1G86GW-Q100H	935305309125	Active	SOT353-1_125	3,000	訂單產(chǎn)品

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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