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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74AUP1T45GF

Low-power dual supply translating transceiver; 3-state

The 74AUP1T45 is a single bit transceiver featuring two data input-outputs (A and B), a direction control input (DIR) and dual supply pins (VCC(A) and VCC(B)) which enable bidirectional level translation. Both VCC(A) and VCC(B) can be supplied at any voltage between 1.1 V and 3.6 V making the device suitable for interfacing between any of the low voltage nodes (1.2 V, 1.5 V, 1.8 V, 2.5 V and 3.3 V). Pins A and DIR are referenced to VCC(A) and pin B is referenced to VCC(B). A HIGH on DIR allows transmission from A to B and a LOW on DIR allows transmission from B to A.

Schmitt trigger action on all inputs makes the circuit tolerant of slower input rise and fall times across the entire VCC(A) and VCC(B) ranges. The device ensures low static and dynamic power consumption and is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing any damaging backflow current through the device when it is powered down. In suspend mode when either VCC(A) or VCC(B) are at GND, both A and B are in the high-impedance OFF-state.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range:

    • VCC(A): 1.1 V to 3.6 V

    • VCC(B): 1.1 V to 3.6 V

  • High noise immunity

  • Low static power consumption; ICC = 0.9 μA (maximum)

  • Suspend mode

  • Latch-up performance exceeds 100 mA per JESD 78 Class II

  • Inputs accept voltages up to 3.6 V

  • Low noise overshoot and undershoot < 10 % of VCC

  • IOFF circuitry provides partial power-down mode operation

  • Complies with JEDEC standards:

    • JESD8-7 (1.2 V to 1.95 V)

    • JESD8-5 (1.8 V to 2.7 V)

    • JESD8-B (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

PCB Symbol, Footprint and 3D Model

Model Name 描述

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74AUP1T45GF 74AUP1T45GF,132
(935281331132)
Obsolete no package information

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
74AUP1T45GF 74AUP1T45GF,132 74AUP1T45GF rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (5)

文件名稱 標(biāo)題 類型 日期
74AUP1T45 Low-power dual supply translating transceiver; 3-state Data sheet 2023-07-20
AN10161 PicoGate Logic footprints Application note 2002-10-29
Nexperia_document_guide_Logic_translators Nexperia Logic Translators Brochure 2021-04-12
aup1t45 aup1t45 IBIS model IBIS model 2014-12-21
Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Leaflet 2019-04-12

支持

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

文件名稱 標(biāo)題 類型 日期
aup1t45 aup1t45 IBIS model IBIS model 2014-12-21

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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