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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產(chǎn)品(AEC-Q100/Q101)

74AUP1T97GW-Q100

Low-power configurable gate with voltage-level translator

The 74AUP1T97-Q100 is a configurable multiple function gate with level translating, Schmitt?-?trigger inputs. The device can be configured as any of the following logic functions MUX, AND, OR, NAND, NOR, inverter and buffer; using the 3-bit input. All inputs can be connected directly to VCC or GND. Low threshold Schmitt trigger inputs allow these devices to be driven by 1.8 V logic levels in 3.3 V applications. This device ensures very low static and dynamic power consumption across the entire VCC range from 2.3 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.

Features and benefits

  • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

    • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

  • Wide supply voltage range from 2.3 V to 3.6 V

  • CMOS low power dissipation

  • High noise immunity

  • Overvoltage tolerant inputs to 3.6 V

  • Low noise overshoot and undershoot < 10 % of VCC

  • IOFF circuitry provides partial power-down mode operation

  • Latch-up performance exceeds 100 mA per JESD 78 Class II

  • Low static power consumption; ICC = 1.5 μA (maximum)

  • Complies with JEDEC standards:

    • JESD8-12 (0.8 V to 1.3 V)

    • JESD8-11 (0.9 V to 1.65 V)

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8C (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

參數(shù)類型

型號 VCC (V) Logic switching levels Output drive capability (mA) tpd (ns) fmax (MHz) Nr of bits Power dissipation considerations Tamb (°C) Rth(j-a) (K/W) Ψth(j-top) (K/W) Rth(j-c) (K/W) Package name
74AUP1T97GW-Q100 2.3?-?3.6 CMOS ± 4 3.9 70 1 ultra low -40~125 264 38.6 153 TSSOP6

封裝

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
74AUP1T97GW-Q100 74AUP1T97GW-Q100H
(935691179125)
Active 59 SOT363-2
TSSOP6
(SOT363-2)
SOT363-2 SOT363-2_125

環(huán)境信息

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
74AUP1T97GW-Q100 74AUP1T97GW-Q100H 74AUP1T97GW-Q100 rohs rhf rhf
品質(zhì)及可靠性免責聲明

文檔 (5)

文件名稱 標題 類型 日期
74AUP1T97_Q100 Low-power configurable gate with voltage-level translator Data sheet 2023-07-17
SOT363-2 3D model for products with SOT363-2 package Design support 2023-02-02
SOT363-2 plastic thin shrink small outline package; 6 leads; body width 1.25 mm Package information 2022-11-21
SOT363-2_125 TSSOP6 ; Reel pack for SMD, 7"; Q3/T4 product orientation Packing information 2022-11-04
74AUP1T97GW-Q100_Nexperia_Product_Reliability 74AUP1T97GW-Q100 Nexperia Product Reliability Quality document 2024-06-16

支持

如果您需要設計/技術(shù)支持,請告知我們并填寫 應答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
SOT363-2 3D model for products with SOT363-2 package Design support 2023-02-02

訂購、定價與供貨

型號 Orderable part number Ordering code (12NC) 狀態(tài) 包裝 Packing Quantity 在線購買
74AUP1T97GW-Q100 74AUP1T97GW-Q100H 935691179125 Active SOT363-2_125 3,000 訂單產(chǎn)品

樣品

作為 Nexperia 的客戶,您可以通過我們的銷售機構(gòu)訂購樣品。

如果您沒有 Nexperia 的直接賬戶,我們的全球和地區(qū)分銷商網(wǎng)絡可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可訂購部件

型號 可訂購的器件編號 訂購代碼(12NC) 封裝 從經(jīng)銷商處購買
74AUP1T97GW-Q100 74AUP1T97GW-Q100H 935691179125 SOT363-2 訂單產(chǎn)品
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