The 74AUP2G38 provides the dual 2-input NAND gate with open?-?drain output. The output of the device is an open drain and can be connected to other open?-?drain outputs to implement active?-?LOW wired?-?OR or active?-?HIGH wired?-?AND functions.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using IOFF. The IOFF circuitry disables the output, preventing a damaging backflow current through the device when it is powered down.
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.