可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷(xiāo)商處購(gòu)買(mǎi) |
|---|---|---|---|---|
| 74AUP2G38GN | 74AUP2G38GN,115 | 935292227115 | SOT1116 | 訂單產(chǎn)品 |
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Click here for more information74AUP2G38GN
Low-power dual 2-input NAND gate; open drain
The 74AUP2G38 provides the dual 2-input NAND gate with open?-?drain output. The output of the device is an open drain and can be connected to other open?-?drain outputs to implement active?-?LOW wired?-?OR or active?-?HIGH wired?-?AND functions.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using IOFF. The IOFF circuitry disables the output, preventing a damaging backflow current through the device when it is powered down.
Features and benefits
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
Low static power consumption; ICC = 0.9 μA (maximum)
Latch-up performance exceeds 100 mA per JESD78B Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial Power-down mode operation
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
參數(shù)類(lèi)型
| 型號(hào) | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Package name |
|---|---|---|---|---|---|---|---|---|---|
| 74AUP2G38GN | 0.8?-?3.6 | CMOS | 1.9 | 8.5 | 70 | 2 | ultra low | -40~125 | XSON8 |
PCB Symbol, Footprint and 3D Model
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封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74AUP2G38GN | 74AUP2G38GN,115 (935292227115) |
Active | aB |
XSON8 (SOT1116) |
SOT1116 |
REFLOW_BG-BD-1
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SOT1116_115 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74AUP2G38GN | 74AUP2G38GN,115 | 74AUP2G38GN |
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Series
文檔 (12)
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| 74AUP2G38 | Low-power dual 2-input NAND gate; open drain | Data sheet | 2023-07-31 |
| AN11052 | Pin FMEA for AUP family | Application note | 2019-01-09 |
| Nexperia_document_guide_MiniLogic_MicroPak_201808 | MicroPak leadless logic portfolio guide | Brochure | 2018-09-03 |
| SOT1116 | 3D model for products with SOT1116 package | Design support | 2023-02-02 |
| aup2g38 | aup2g38 IBIS model | IBIS model | 2013-04-07 |
| Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Leaflet | 2019-04-12 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT1116 | plastic, leadless extremely thin small outline package; 8 terminals; 0.3 mm pitch; 1.2 mm x 1 mm x 0.35 mm body | Package information | 2022-06-02 |
| SOT1116_115 | XSON8 ; Reel pack for SMD, 7''; Q1/T1 product orientation | Packing information | 2020-04-21 |
| 74AUP2G38GN_Nexperia_Product_Reliability | 74AUP2G38GN Nexperia Product Reliability | Quality document | 2024-06-16 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| MAR_SOT1116 | MAR_SOT1116 Topmark | Top marking | 2013-06-03 |
支持
如果您需要設(shè)計(jì)/技術(shù)支持，請(qǐng)告知我們并填寫(xiě) 應(yīng)答表 我們會(huì)盡快回復(fù)您。
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
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訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線(xiàn)購(gòu)買(mǎi) |
|---|---|---|---|---|---|---|
| 74AUP2G38GN | 74AUP2G38GN,115 | 935292227115 | Active | SOT1116_115 | 5,000 | 訂單產(chǎn)品 |
樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
74AUP2G38GN
Low-power dual 2-input NAND gate; open drain
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