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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74HC4514D

4-to-16 line decoder/demultiplexer with input latches

The 74HC4514; 74HCT4514 is a 4-to-16 line decoder/demultiplexer having four binary weighted address inputs (A0 to A3), with latches, a latch enable input (LE), an enable input (E) and 16 outputs (Q0 to Q15). When LE is HIGH, the selected output is determined by the data on An. When LE goes LOW, the last data present at An are stored in the latches and the outputs remain stable. When E is LOW, the selected output, determined by the contents of the latch, is HIGH. At E HIGH, all outputs are LOW. The enable input E does not affect the state of the latch. When the device is used as a demultiplexer, E is the data input and A0 to A3 are the address inputs. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.

The 74HCT4514 features reduced input threshold levels to allow interfacing to TTL logic levels.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 2.0 V to 6.0 V

  • CMOS low power dissipation

  • High noise immunity

  • Input levels:

    • For 74HC4514: CMOS level

    • For 74HCT4514: TTL level

  • 16-line demultiplexing capability

  • Decodes 4 binary-coded inputs into 16 mutually-exclusive outputs

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • Complies with JEDEC standards

    • JESD8C (2.7 V to 3.6 V)

    • JESD7A (2.0 V to 6.0 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

Applications

  • Digital multiplexing

  • Address decoding

  • Hexadecimal/BCD decoding

參數(shù)類型

型號(hào) Package name
74HC4514D SO24

PCB Symbol, Footprint and 3D Model

Model Name 描述

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購的器件編號(hào),(訂購碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74HC4514D 74HC4514D,653
(933715670653)
Withdrawn / End-of-life SOT137-1
SO24
(SOT137-1)
SOT137-1 SO-SOJ-WAVE
WAVE_BG-BD-1
暫無信息
74HC4514D,652
(933715670652)
Obsolete 暫無信息

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
74HC4514D 74HC4514D,653 74HC4514D rohs rhf rhf
74HC4514D 74HC4514D,652 74HC4514D rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (9)

文件名稱 標(biāo)題 類型 日期
74HC_HCT4514 4-to-16 line decoder/demultiplexer with input latches Data sheet 2024-08-12
AN11044 Pin FMEA 74HC/74HCT family Application note 2019-01-09
SOT137-1 3D model for products with SOT137-1 package Design support 2020-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT137-1 plastic, small outline package; 24 leads; 1.27 mm pitch; 15.4 mm x 7.5 mm x 2.65 mm body Package information 2022-06-21
74HC4514D_Nexperia_Product_Reliability 74HC4514D Nexperia Product Reliability Quality document 2025-03-20
HCT_USER_GUIDE HC/T User Guide User manual 1997-10-31
SO-SOJ-WAVE Footprint for wave soldering Wave soldering 2009-10-08
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。


Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

文件名稱 標(biāo)題 類型 日期
SOT137-1 3D model for products with SOT137-1 package Design support 2020-01-22

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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