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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車(chē)應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74LVC1G74GF

Single D-type flip-flop with set and reset; positive edge trigger

The 74LVC1G74 is a single positive edge triggered D-type flip-flop with individual data (D), clock (CP), set (SD) and reset (RD) inputs, and complementary Q and Q outputs. Data at the D-input that meets the set-up and hold time requirements on the LOW-to-HIGH clock transition will be stored in the flip-flop and appear at the Q output. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments.

Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.

This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 1.65 V to 5.5 V

  • Overvoltage tolerant inputs to 5.5 V

  • High noise immunity

  • ±24 mA output drive (VCC = 3.0 V)

  • CMOS low power consumption

  • Direct interface with TTL levels

  • IOFF circuitry provides partial Power-down mode operation

  • Latch-up performance exceeds 250 mA

  • Complies with JEDEC standard:

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8-B/JESD36 (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

參數(shù)類(lèi)型

型號(hào) Package name
74LVC1G74GF XSON8

PCB Symbol, Footprint and 3D Model

Model Name 描述

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74LVC1G74GF 74LVC1G74GF,115
(935290507115)
Withdrawn / End-of-life SOT1089
XSON8
(SOT1089)
SOT1089 REFLOW_BG-BD-1
SOT1089_115

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
74LVC1G74GF 74LVC1G74GF,115 74LVC1G74GF rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (11)

文件名稱(chēng) 標(biāo)題 類(lèi)型 日期
74LVC1G74 Single D-type flip-flop with set and reset; positive?edge?trigger Data sheet 2024-08-09
AN11009 Pin FMEA for LVC family Application note 2019-01-09
AN90063 Questions about package outline drawings Application note 2025-03-12
Nexperia_document_guide_MiniLogic_MicroPak_201808 MicroPak leadless logic portfolio guide Brochure 2018-09-03
SOT1089 3D model for products with SOT1089 package Design support 2019-10-07
lvc1g74 74LVC1G74 IBIS model IBIS model 2014-10-20
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
XSON8_SOT1089_mk plastic, extremely thin small outline package; no leads; 8 terminals; 0.55 mm pitch; 1.35 mm x 1 mm x 0.5 mm body Marcom graphics 2017-01-28
SOT1089 plastic, leadless extremely thin small outline package; 8 terminals; 0.35 mm pitch; 1.35 mm x 1 mm x 0.5 mm body Package information 2022-06-03
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
MAR_SOT1089 MAR_SOT1089 Topmark Top marking 2013-06-03

支持

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

文件名稱(chēng) 標(biāo)題 類(lèi)型 日期
lvc1g74 74LVC1G74 IBIS model IBIS model 2014-10-20
SOT1089 3D model for products with SOT1089 package Design support 2019-10-07

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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