可訂購部件
| 型號(hào) | 可訂購的器件編號(hào) | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| BSS87 | BSS87,115 | 933943940115 | SOT89 | 訂單產(chǎn)品 |
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Click here for more informationBSS87
200 V, N-channel vertical D-MOS transistor
N-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (D-MOSFET) in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.
不建議用在新設(shè)計(jì)中(NRND)。
Features and benefits
Direct interface to Complementary (C-MOS) transistor and Transistor-Transistor Logic (TTL) devices.
Very fast switching
No secondary breakdown
Applications
Relay driver
High-speed line driver
Load-side loadswitch
Switching circuits
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSS87
|
SOT89 | SOT89 | Not for design in | N | 1 | 200 | 20 | 3000 | 4000 | 150 | 0.7 | 1.4 | 5.5 | 0.58 | N | 100 | 20 | 2011-01-24 |
封裝
| 型號(hào) | 可訂購的器件編號(hào)，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
|
BSS87
|
BSS87,115 (933943940115) |
Active | KA |
(SOT89) |
SOT89 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT89_115 |
文檔 (20)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BSS87 | 200 V, N-channel vertical D-MOS transistor | Data sheet | 2014-12-09 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| PBSS4021NX | 20 V, 7 A NPN low VCEsat (BISS) transistor | Data sheet | 2017-05-29 |
| PBSS4041NX | 60 V, 6.2 A NPN low VCEsat (BISS) transistor | Data sheet | 2017-05-29 |
| SOT89 | 3D model for products with SOT89 package | Design support | 2018-12-05 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT89_mk | plastic, surface-mounted package; 3 leads; 1.5 mm pitch; 4.5 mm x 2.5 mm x 1.5 mm body | Marcom graphics | 2017-01-28 |
| SOT89 | plastic, surface-mounted package; 3 leads; 1.5 mm pitch; 4.5 mm x 2.5 mm x 1.5 mm body | Package information | 2024-11-12 |
| SOT89_115 | Reel pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2020-04-21 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| BSS87_22_06_2012 | BSS87 Spice model | SPICE model | 2013-12-13 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
支持
如果您需要設(shè)計(jì)/技術(shù)支持，請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BSS87_22_06_2012 | BSS87 Spice model | SPICE model | 2013-12-13 |
| SOT89 | 3D model for products with SOT89 package | Design support | 2018-12-05 |
訂購、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| BSS87 | BSS87,115 | 933943940115 | Active | SOT89_115 | 1,000 | 訂單產(chǎn)品 |
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
BSS87
200 V, N-channel vertical D-MOS transistor
從安世半導(dǎo)體購買
| SKU | 庫存* | MOQ | 單位價(jià)格 | 數(shù)量 |
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