可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經銷商處購買 |
|---|---|---|---|---|
| GANE190-700BBA | GANE190-700BBAZ | 934667672332 | SOT428-2 | 訂單產品 |
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Click here for more information參數類型
| 型號 | Package version | Package name | Product status | Configuration | Channel type | Nr of transistors | VDS [max] (V) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GANE190-700BBA | SOT428-2 | TO252 | Production | e-mode | N | 1 | 700 | 150 | 11.5 | 1.1 | 84 | 1.7 | N | 96 | 30 | 2024-09-17 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| GANE190-700BBA | GANE190-700BBAZ (934667672332) |
Active | 190SBBA |
TO252 (SOT428-2) |
SOT428-2 | SOT428-2_332 |
文檔 (5)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| GANE190-700BBA | 700 V, 190 mOhm Gallium Nitride (GaN) FET in DPAK package | Data sheet | 2025-03-13 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
| AN90041 | Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs | Application note | 2023-05-09 |
| SOT428-2 | plastic, single-ended surface-mounted package (DPAK); 3 leads;2.286 mm pitch; 6.1 mm x 6.6 mm x 2.3 mm body | Package information | 2025-01-16 |
| SOT428-2_332 | DPAK; Reel dry pack for SMD, 13"; Q2/T3 product orientation | Packing information | 2024-03-28 |
模型
No documents available
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| GANE190-700BBA | GANE190-700BBAZ | 934667672332 | Active | SOT428-2_332 | 2,500 | 訂單產品 |
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網絡可為您提供 Nexperia 樣品支持。查看官方經銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
GANE190-700BBA
700 V, 190 mOhm Gallium Nitride (GaN) FET in DPAK package
從安世半導體購買
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