可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| NGD4300DD | NGD4300DDJ | 935691635118 | SOT8063-1 | 訂單產(chǎn)品 |
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Click here for more informationNGD4300DD
4 A peak high-performance dual MOSFET gate driver
The NGD4300 is a high-performance gate driver designed to drive both high-side and low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap supply with an integrated diode. Both low-side and high-side output drivers have an independent undervoltage lockout (UVLO) circuit which disables the output driver when the driver supply is below its threshold level. The NGD4300 accepts input control signals complying with both TTL and CMOS signaling as low as 2.5 V (±10%). The low voltage, provided by an internal voltage regulator, is used to supply circuitry in signal paths controlling the low-side and high-side power switches. This enables a low-power operation and a better controlled driver performance irrespective of the IC supply voltage.
Excellent delay matching of 1 ns typical is achieved for the low-side and high-side signal paths. The 4 A peak source and sink current capability of the driver’s output stage guarantees short rise- and fall-times even at high loads.
The NGD4300 is offered in the SO8, HWSON8 and HSO8 packages, and operates over an extended ??40 °C to +125 °C temperature range.
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Features and benefits
- Input signals complying with both TTL and CMOS signaling of 2.5 V, 3.3 V, and 5 V
- Output signals with excellent propagation delay matching of 1 ns typical
- Fast propagation times of 13 ns typical
- Switching frequency up to 1 MHz
- 4 A peak source and 5 A sink current capability of the gate driver output stage
- 4 ns rise and 3.5 ns fall times with 1000 pF loads
- Bootstrap supply voltage up to 120 V using an integrated bootstrap diode
- 8 V to 17 V VDD operation range
- Undervoltage protection for both low-side and high-side supplies
- Low-power consumption (IDDO = 0.6 mA typical)
- 8 pin SO8, HWSON8 and HSO8 packages
- ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Specified from -40 °C to +125 °C
Applications
Current-fed, push-pull converters
Two-switch forward power converters
Class-D audio amplifiers
Solid-state motor drives
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| NGD4300DD | NGD4300DDJ (935691635118) |
Active | NGD4300 |
HSO8 (SOT8063-1) |
SOT8063-1 | SOT8063-1_118 |
Boards
| Part number | Description | Type | Quick links | Shop link |
|---|---|---|---|---|
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描述 NGD4300 application board is designed for evaluating NGD4300, which is a 120V High-side and Low-side gate driver with 4A source and 5A sink peak current capability. This application board can be used to evaluate the behavior and performance of the gate driver in a buck converter environment.
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類型 Demo board
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Quick links
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Shop link
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Series
文檔 (6)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| NGD4300 | 4 A peak high-performance dual MOSFET gate driver | Data sheet | 2024-11-11 |
| NGD4300_half_bridge_gate_driver_leaflet | Driving Power with Efficiency: The NGD4300 Half-bridge Gate Driver | Leaflet | 2024-11-14 |
| nexperia_leaflet_NGD4300_half_bridge_gate_driver_CN | 助力高效率電源轉(zhuǎn)換： NGD4300半橋柵極驅(qū)動器 | Leaflet | 2025-01-09 |
| SOT8063-1 | plastic thermal enhanced small outline package; 8 leads; 1.27 mm pitch;4.9 mm × 3.9 mm ×1.7 mm body; exposed die pad | Package information | 2024-09-24 |
| SOT8063-1_118 | HSO8; Reel pack for SMD, 13"; Q1/T1 product orientation | Packing information | 2024-09-19 |
| UM90032 | NGD4300 gate driver evaluation board | User manual | 2024-09-16 |
支持
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模型
No documents available
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| NGD4300DD | NGD4300DDJ | 935691635118 | Active | SOT8063-1_118 | 2,500 | 訂單產(chǎn)品 |
樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
NGD4300DD
4 A peak high-performance dual MOSFET gate driver
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