可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷(xiāo)商處購(gòu)買(mǎi) |
|---|---|---|---|---|
| PMGD290XN | PMGD290XN,115 | 934057731115 | SOT363 | 訂單產(chǎn)品 |
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Click here for more informationPMGD290XN
Dual N-channel TrenchMOS extremely low level FET
Dual extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
不建議用在新設(shè)計(jì)中(NRND)。
Alternatives
Features and benefits
Low conduction losses due to low on-state resistance
Saves PCB space due to small footprint (40 % smaller than SOT23)
Suitable for high frequency applications due to fast switching characteristics
Suitable for low gate drive sources
Applications
Driver circuits
Switching in portable appliances
參數(shù)類(lèi)型
| 型號(hào) | Package version | Package name | Product status | Release date |
|---|---|---|---|---|
|
PMGD290XN
|
SOT363 | TSSOP6 | Not for design in | 2011-01-24 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
|
PMGD290XN
|
PMGD290XN,115 (934057731115) |
Active | G9% |
TSSOP6 (SOT363) |
SOT363 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT363_115 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
|
PMGD290XN
|
PMGD290XN,115 | PMGD290XN |
|
|
文檔 (21)
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| PMGD290XN | Dual N-channel uTrenchmos (tm) extremely low level FET | Data sheet | 2004-02-25 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN90032 | Low temperature soldering, application study | Application note | 2022-02-22 |
| Nexperia_document_guide_MiniLogic_PicoGate_201901 | PicoGate leaded logic portfolio guide | Brochure | 2019-01-07 |
| SOT363 | 3D model for products with SOT363 package | Design support | 2018-12-05 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| TSSOP6_SOT363_mk | plastic, surface-mounted package; 6 leads; 1.3 mm pitch; 2 mm x 1.25 mm x 0.95 mm body | Marcom graphics | 2017-01-28 |
| SOT363 | plastic, surface-mounted package; 6 leads; 0.65 mm pitch; 2.1 mm x 1.25 mm x 0.95 mm body | Package information | 2022-06-01 |
| SOT363_115 | TSSOP6; Reel pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2020-06-12 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PMGD290XN_12_8_2011 | PMGD290XN_12_8_2011 Spice parameter | SPICE model | 2011-08-22 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
| MAR_SOT363 | MAR_SOT363 Topmark | Top marking | 2013-06-03 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
支持
如果您需要設(shè)計(jì)/技術(shù)支持，請(qǐng)告知我們并填寫(xiě) 應(yīng)答表 我們會(huì)盡快回復(fù)您。
模型
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| PMGD290XN_12_8_2011 | PMGD290XN_12_8_2011 Spice parameter | SPICE model | 2011-08-22 |
| SOT363 | 3D model for products with SOT363 package | Design support | 2018-12-05 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線(xiàn)購(gòu)買(mǎi) |
|---|---|---|---|---|---|---|
| PMGD290XN | PMGD290XN,115 | 934057731115 | Active | SOT363_115 | 3,000 | 訂單產(chǎn)品 |
樣品
作為 Nexperia 的客戶(hù)，您可以通過(guò)我們的銷(xiāo)售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶(hù)，我們的全球和地區(qū)分銷(xiāo)商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷(xiāo)商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PMGD290XN
Dual N-channel TrenchMOS extremely low level FET
從安世半導(dǎo)體購(gòu)買(mǎi)
| SKU | 庫(kù)存* | MOQ | 單位價(jià)格 | 數(shù)量 |
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