可訂購部件
型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
---|---|---|---|---|
PMV65XP | PMV65XP,215 | 934058736215 | SOT23 | 訂單產(chǎn)品 |
PMV65XP | PMV65XPVL | 934058736235 | SOT23 | 訂單產(chǎn)品 |
進一步了解Nexperia的豐富產(chǎn)品組合,比如二極管、雙極性晶體管、ESD保護器件、MOSFET器件、氮化鎵場效應晶體管(GaN FET)、絕緣柵雙極晶體管(IGBT)以及模擬IC和邏輯IC。我們的器件廣泛應用于汽車、工業(yè)、移動和消費等多個領域,幾乎為世界上所有電子設計提供支持。
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Click here for more information20 V, single P-channel Trench MOSFET
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Low threshold voltage
Low on-state resistance
Trench MOSFET technology
Low power DC-to-DC converters
Load switching
Battery management
Battery powered portable equipment
型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PMV65XP | SOT23 | SOT23 | Production | P | 1 | -20 | 12 | 74 | 92 | 150 | -4.3 | 1.65 | 7.7 | 0.48 | -0.65 | N | 744 | 65 | 2011-01-24 |
型號 | 可訂購的器件編號,(訂購碼(12NC)) | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
---|---|---|---|---|---|---|---|
PMV65XP | PMV65XP,215 (934058736215) |
Active | %M9 |
(SOT23) |
SOT23 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT23_215 |
PMV65XPVL (934058736235) |
Active | %M9 | SOT23_235 |
文件名稱 | 標題 | 類型 | 日期 |
---|---|---|---|
PMV65XP | 20 V, single P-channel Trench MOSFET | Data sheet | 2017-05-04 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN10910 | Protecting charger interfaces and typical battery charging topologies with external bypass transistors | Application note | 2021-04-12 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
SOT23 | 3D model for products with SOT23 package | Design support | 2019-01-22 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SOT23_mk | plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body | Marcom graphics | 2017-01-28 |
SOT23 | plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body | Package information | 2022-10-12 |
SOT23_215 | Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2020-04-29 |
SOT23_235 | Reel pack for SMD, 11"; Q3/T4 product orientation | Packing information | 2020-06-01 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
PMV65XP_8_20_2010 | PMV65XP_8_20_2010 Spice parameter | SPICE model | 2012-04-16 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
如果您需要設計/技術(shù)支持,請告知我們并填寫 應答表 我們會盡快回復您。
文件名稱 | 標題 | 類型 | 日期 |
---|---|---|---|
PMV65XP_8_20_2010 | PMV65XP_8_20_2010 Spice parameter | SPICE model | 2012-04-16 |
SOT23 | 3D model for products with SOT23 package | Design support | 2019-01-22 |
作為 Nexperia 的客戶,您可以通過我們的銷售機構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶,我們的全球和地區(qū)分銷商網(wǎng)絡可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.