可訂購部件
型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
---|---|---|---|---|
PMZB350UPE | PMZB350UPE,315 | 934066841315 | SOT883B | 訂單產(chǎn)品 |
進一步了解Nexperia的豐富產(chǎn)品組合,比如二極管、雙極性晶體管、ESD保護器件、MOSFET器件、氮化鎵場效應晶體管(GaN FET)、絕緣柵雙極晶體管(IGBT)以及模擬IC和邏輯IC。我們的器件廣泛應用于汽車、工業(yè)、移動和消費等多個領域,幾乎為世界上所有電子設計提供支持。
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Click here for more information20 V, single P-channel Trench MOSFET
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Low threshold voltage
Very fast switching
Trench MOSFET technology
1.8 kV ESD protected
Relay driver
High-speed line driver
High-side load switch
Switching circuits
型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | VESD (kV) (kV) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PMZB350UPE | SOT883B | DFN1006B-3 | Production | P | 1 | -20 | 8 | 450 | 645 | 1800 | 150 | -1.4 | 0.25 | 1.3 | 0.36 | -0.7 | N | 127 | 34 | 2012-08-24 |
型號 | 可訂購的器件編號,(訂購碼(12NC)) | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
---|---|---|---|---|---|---|---|
PMZB350UPE | PMZB350UPE,315 (934066841315) |
Active | 0100 1100 |
DFN1006B-3 (SOT883B) |
SOT883B |
REFLOW_BG-BD-1
|
SOT883B_315 |
文件名稱 | 標題 | 類型 | 日期 |
---|---|---|---|
PMZB350UPE | 20 V, single P-channel Trench MOSFET | Data sheet | 2017-05-04 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
AN90023 | Thermal performance of DFN packages | Application note | 2020-11-23 |
SOT883B | 3D model for products with SOT883B package | Design support | 2020-01-22 |
nexperia_document_leaflet_SsMOS_for_mobile_2022-CHN | 適合移動和便攜式設備的 大批量小信號MOSFET, 采用WLCSP和無引腳DFN封裝 | Leaflet | 2022-07-04 |
nexperia_document_leaflet_SsMOS_for_mobile_2022 | High volume small-signal MOSFETs for mobile and portables, in WLCSP and leadless DFN packages | Leaflet | 2022-07-04 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
DFN1006B-3_SOT883B_mk | plastic, leadless ultra small plastic package; 3 solder lands; 0.35 mm pitch; 1 mm x 0.6 mm x 0.37 mm body | Marcom graphics | 2017-01-28 |
SOT883B | plastic, leadless ultra small plastic package; 3 solder lands; 0.35 mm pitch; 1.0 mm x 0.6 mm x 0.37 mm body | Package information | 2022-05-20 |
SOT883B_315 | DFN1006B-3; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2020-06-12 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
PMZB350UPE_30_05_2012 | PMZB350UPE Spice model | SPICE model | 2013-12-13 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
如果您需要設計/技術支持,請告知我們并填寫 應答表 我們會盡快回復您。
文件名稱 | 標題 | 類型 | 日期 |
---|---|---|---|
PMZB350UPE_30_05_2012 | PMZB350UPE Spice model | SPICE model | 2013-12-13 |
SOT883B | 3D model for products with SOT883B package | Design support | 2020-01-22 |
型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
---|---|---|---|---|---|---|
PMZB350UPE | PMZB350UPE,315 | 934066841315 | Active | SOT883B_315 | 10,000 | 訂單產(chǎn)品 |
作為 Nexperia 的客戶,您可以通過我們的銷售機構(gòu)訂購樣品。
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.