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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

PSMN069-100YS

N-channel LFPAK 100 V 72.4 m? standard level MOSFET

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Features and benefits

  • Advanced TrenchMOS provides low RDSon and low gate charge

  • High efficiency gains in switching power converters

  • Improved mechanical and thermal characteristics

  • LFPAK provides maximum power density in a Power SO8 package

Applications

  • DC-to-DC converters

  • Lithium-ion battery protection

  • Load switching

  • Motor control

  • Server power supplies

參數(shù)類型

型號 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN069-100YS SOT669 LFPAK56; Power-SO8 Production N 1 100 72.4 175 17 4.8 14 56 74 3 N 645 63 2011-01-27

封裝

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
PSMN069-100YS PSMN069-100YS,115
(934064536115)
Active 69100 SOT669
LFPAK56; Power-SO8
(SOT669)
SOT669 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT669_115

環(huán)境信息

型號 可訂購的器件編號 化學(xué)成分 RoHS RHF指示符
PSMN069-100YS PSMN069-100YS,115 PSMN069-100YS rohs rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (24)

文件名稱 標(biāo)題 類型 日期
PSMN069-100YS N-channel LFPAK 100 V, 72.4 mΩ standard level MOSFET Data sheet 2018-04-04
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2025-02-18
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2025-03-20
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
AN90063 Questions about package outline drawings Application note 2025-03-12
SOT669 3D model for products with SOT669 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LFPAK56_POWER-SO8_SOT669_mk plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body Marcom graphics 2017-01-28
SOT669 plastic, single-ended surface-mounted package; 4 terminals Package information 2025-03-20
SOT669_115 LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation Packing information 2022-05-10
T6_SOT669_PSMN069-100YS_Nexperia_Quality_document PSMN069-100YS Quality document Quality document 2022-10-13
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PSMN069-100YS PSMN069-100YS SPICE model SPICE model 2011-01-26
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
PSMN069-100YS_RC_Thermal_Model PSMN069-100YS Thermal design model Thermal design 2021-01-18
PSMN069-100YS PSMN069-100YS Thermal model Thermal model 2011-04-04
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。


Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

文件名稱 標(biāo)題 類型 日期
PSMN069-100YS PSMN069-100YS SPICE model SPICE model 2011-01-26
PSMN069-100YS_RC_Thermal_Model PSMN069-100YS Thermal design model Thermal design 2021-01-18
PSMN069-100YS PSMN069-100YS Thermal model Thermal model 2011-04-04
SOT669 3D model for products with SOT669 package Design support 2017-06-30

訂購、定價(jià)與供貨

型號 Orderable part number Ordering code (12NC) 狀態(tài) 包裝 Packing Quantity 在線購買
PSMN069-100YS PSMN069-100YS,115 934064536115 Active SOT669_115 1,500 訂單產(chǎn)品

樣品

作為 Nexperia 的客戶,您可以通過我們的銷售機(jī)構(gòu)訂購樣品。

如果您沒有 Nexperia 的直接賬戶,我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可訂購部件

型號 可訂購的器件編號 訂購代碼(12NC) 封裝 從經(jīng)銷商處購買
PSMN069-100YS PSMN069-100YS,115 934064536115 SOT669 訂單產(chǎn)品
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