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Click here for more information50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1?=?10?k?,?R2?=?47?k?
NPN/NPN Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
PNP/PNP complement: PUMB9
NPN/PNP complement: PUMD9
100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
Digital application in automotive and industrial segments
Cost-saving alternative for BC847 series in digital applications
Controlling IC inputs
Switching loads
| 型號(hào) | Package version | Package name | Size (mm) | IC [max] (mA) | R1 (typ) (kΩ) | R2 (typ) (kΩ) | Channel type | Ptot (mW) | VCEO (V) | Tj [max] (°C) | Automotive qualified |
|---|---|---|---|---|---|---|---|---|---|---|---|
| PUMH9 | SOT363 | TSSOP6 | 2.1 x 1.25 x 0.95 | 100 | 10 | 47 | NPN/NPN | 300 | 50 | 150 | N |
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PUMH9 | PUMH9,115 (934055557115) |
Active | H%9 |
TSSOP6 (SOT363) |
SOT363 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT363_115 |
| PUMH9,125 (934055557125) |
Active | H%9 | SOT363_125 | ||||
| PUMH9,135 (934055557135) |
Active | H%9 | SOT363_135 | ||||
| PUMH9,165 (934055557165) |
Active | H%9 | SOT363_165 |
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PUMH9 | PUMH9,115 | PUMH9 |
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| PUMH9 | PUMH9,125 | PUMH9 |
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| PUMH9 | PUMH9,135 | PUMH9 |
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| PUMH9 | PUMH9,165 | PUMH9 |
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| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PUMH9 | NPN/NPN resistor-equipped double transistor | Data sheet | 2022-06-30 |
| AN90032 | Low temperature soldering, application study | Application note | 2022-02-22 |
| Nexperia_document_guide_MiniLogic_PicoGate_201901 | PicoGate leaded logic portfolio guide | Brochure | 2019-01-07 |
| SOT363 | 3D model for products with SOT363 package | Design support | 2018-12-05 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| TSSOP6_SOT363_mk | plastic, surface-mounted package; 6 leads; 1.3 mm pitch; 2 mm x 1.25 mm x 0.95 mm body | Marcom graphics | 2017-01-28 |
| LSYMTRA | Letter Symbols - Transistors; General | Other type | 1999-05-06 |
| SOT363 | plastic, surface-mounted package; 6 leads; 0.65 mm pitch; 2.1 mm x 1.25 mm x 0.95 mm body | Package information | 2022-06-01 |
| SOT363_115 | TSSOP6; Reel pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2020-06-12 |
| SOT363_125 | TSSOP6 ; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2020-04-21 |
| SOT363_135 | TSSOP6; Tape reel SMD; standard product orientation 12NC ending 135 | Packing information | 2020-04-27 |
| SOT363_165 | TSSOP6 ; Reel pack for SMD, 11"; Q3/T4 product orientation | Packing information | 2024-01-24 |
| PUMH9_Nexperia_Product_Reliability | PUMH9 Nexperia Product Reliability | Quality document | 2024-04-22 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PUMH9 | PUMH9 SPICE model | SPICE model | 2024-08-27 |
| MAR_SOT363 | MAR_SOT363 Topmark | Top marking | 2013-06-03 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
如果您需要設(shè)計(jì)/技術(shù)支持，請(qǐng)告知我們并填寫(xiě) 應(yīng)答表 我們會(huì)盡快回復(fù)您。
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| PUMH9 | PUMH9,115 | 934055557115 | Active | SOT363_115 | 3,000 | 訂單產(chǎn)品 |
| PUMH9 | PUMH9,125 | 934055557125 | Active | SOT363_125 | 3,000 | 訂單產(chǎn)品 |
| PUMH9 | PUMH9,135 | 934055557135 | Active | SOT363_135 | 10,000 | 訂單產(chǎn)品 |
| PUMH9 | PUMH9,165 | 934055557165 | Active | SOT363_165 | 10,000 | 訂單產(chǎn)品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1?=?10?k?,?R2?=?47?k?
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