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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

PNS40010ER

400 V, 1 A high power density, standard switching time recovery rectifier

High power density, standard switching time recovery rectifier with high-efficiency planar technology, encapsulated in a small and flat lead SOD123W Surface-Mounted Device (SMD) plastic package.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Forward current IF ≤ 1 A

  • Reverse voltage VR ≤ 400 V

  • Standard switching time

  • Low forward voltage

  • Low reverse current

  • Low inductance

  • Small and flat lead SMD plastic package

  • Package height typ. 1 mm

  • High power capability

  • AEC-Q101 qualified

  • Capable for reflow and wave soldering

Applications

  • General-purpose rectification

  • Reverse polarity protection

  • Standard switching applications

參數(shù)類型

型號(hào) Package version Package name Size (mm) VR [max] (V) IF(AV) per diode; [max] (A) IFSM [max] (A) VF [max] (mV) IR [max] (μA) Configuration trr [max] (ns) IF [max] (mA) Cd [typ] (pF) Automotive qualified
PNS40010ER SOD123W CFP3 2.6 x 1.7 x 1 400.0 1.0 32.0 1100.0 1.0 single 1800.0 1400.0 8.0 Y

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購的器件編號(hào),(訂購碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
PNS40010ER PNS40010ER,115
(934066627115)
Discontinued / End-of-life EH SOD123W
CFP3
(SOD123W)
SOD123W REFLOW_BG-BD-1
WAVE_BG-BD-1
SOD123W_115

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
PNS40010ER PNS40010ER,115 PNS40010ER rohs rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (17)

文件名稱 標(biāo)題 類型 日期
PNS40010ER 400 V, 1 A high power density, standard switching time recovery rectifier Data sheet 2019-08-19
AN90002 Wave soldering guidelines for flatpack packages Application note 2023-11-02
AN90063 Questions about package outline drawings Application note 2025-03-12
Nexperia_document_brochure_Recovery_rectifier Hyperfast recovery, space-saving devices Brochure 2024-05-08
Nexperia_document_brochure_CFP_Schottky_rectifier Schottky rectifiers in CFP packages Brochure 2020-01-28
SOD123W 3D model for products with SOD123W package Design support 2019-01-22
Nexperia_Document_Leaflet_recovery_rectifiers_CHN_2020 恢復(fù)整流器 Leaflet 2020-03-16
Nexperia_Document_Leaflet_Schottky_rectifiers_in_CFP_CHN_2022 CFP封裝的肖特基整流器 Leaflet 2022-07-01
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
CFP3_SOD123W_mk plastic, surface mounted package; 2 terminals; 2.6 mm x 1.7 mm x 1 mm body Marcom graphics 2017-01-28
SOD123W plastic, surface mounted package; 2 terminals; 2.6 mm x 1.7 mm x 1 mm body Package information 2020-04-21
PNS40010ER_Nexperia_Product_Reliability PNS40010ER Nexperia Product Reliability Quality document 2024-04-23
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PNS40010ER PNS40010ER SPICE model SPICE model 2012-07-22
PNS40010ER PNS40010ER SPICE model SPICE model 2018-05-25
TN90007 Evaluation of junction temperature and thermal stacks using the virtual junction Technical note 2024-09-02
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。


Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

文件名稱 標(biāo)題 類型 日期
PNS40010ER PNS40010ER SPICE model SPICE model 2012-07-22
PNS40010ER PNS40010ER SPICE model SPICE model 2018-05-25
SOD123W 3D model for products with SOD123W package Design support 2019-01-22

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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