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650 V, 50 mΩ Gallium Nitride (GaN) FET
The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering superior reliability and performance.
Features and benefits
Ultra-low reverse recovery charge
Simple gate drive (0 V to +10 V or 12 V)
Robust gate oxide (±20 V capability)
High gate threshold voltage (+4 V) for very good gate bounce immunity
Very low source-drain voltage in reverse conduction mode
Transient over-voltage capability (800 V)
Applications
Hard and soft switching converters for industrial and datacom power
Bridgeless totempole PFC
PV and UPS inverters
Servo motor drives
參數(shù)類型
| 型號 | Package version | Package name | Product status | Configuration | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GAN063-650WSA | SOT429 | TO-247-3 | End of life | cascode | N | 1 | 650 | 60 | 175 | 34.5 | 4 | 15 | 143 | 125 | 3.9 | N | 1000 | 130 | 2019-11-17 |
封裝
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| GAN063-650WSA | GAN063-650WSAQ (934660022127) |
Discontinued / End-of-life | GAN063 650WSA |
TO-247-3 (SOT429) |
SOT429 | SOT429_127 |
環(huán)境信息
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| GAN063-650WSA | GAN063-650WSAQ | GAN063-650WSA |
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文檔 (20)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| GAN063-650WSA | 650 V, 50 mOhm Gallium Nitride (GaN) FET | Data sheet | 2020-07-31 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90021 | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
| AN90030 | Paralleling of Nexperia cascode GaN FETs in half-bridge topology | Application note | 2023-03-22 |
| AN90030_translated | ハーフブリッジ?トポロジーにおけるNexperia製GaN FETの並列 | Application note | 2023-04-03 |
| AN90063 | Questions about package outline drawings | Application note | 2025-03-12 |
| SOT429 | 3D model for products with SOT429 package | Design support | 2023-03-13 |
| TO-247_SOT429_mk | plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body | Marcom graphics | 2019-02-19 |
| SOT429 | plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body | Package information | 2020-04-21 |
| GAN063-650WSA | GAN063-650WSA SPICE model | SPICE model | 2019-02-18 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
| GAN063-650WSA_RC_thermal_Model | GAN063-650WSA RC thermal Model | Thermal design | 2019-02-18 |
| GAN063-650WSA_Cauer | GAN063-650WSA Cauer thermal model | Thermal model | 2021-04-07 |
| GaN063-650WSA | GaN041-650WSA Foster thermal model | Thermal model | 2021-04-02 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮書: 功率GaN技術(shù)： 高效功率轉(zhuǎn)換的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| GAN063-650WSA | GAN063-650WSA SPICE model | SPICE model | 2019-02-18 |
| GAN063-650WSA_RC_thermal_Model | GAN063-650WSA RC thermal Model | Thermal design | 2019-02-18 |
| GAN063-650WSA_Cauer | GAN063-650WSA Cauer thermal model | Thermal model | 2021-04-07 |
| GaN063-650WSA | GaN041-650WSA Foster thermal model | Thermal model | 2021-04-02 |
| SOT429 | 3D model for products with SOT429 package | Design support | 2023-03-13 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
GAN063-650WSA
650 V, 50 mΩ Gallium Nitride (GaN) FET
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