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Click here for more informationBUK761R5-40E
N-channel TrenchMOS standard level FET
Standard level N-channel MOSFET in a SOT404A package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features and benefits
AEC-Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
Applications
12 V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK761R5-40E | SOT404A | D2PAK | End of life | N | 1 | 40 | 1.51 | 175 | 120 | 48.2 | 145 | 349 | 94 | 3 | Y | 8500 | 1620 | 2013-04-29 |
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購的器件編號(hào)，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| BUK761R5-40E | BUK761R5-40EJ (934067767118) |
Obsolete | BUK761R5 40E P**XXYY AZ Batch No |
D2PAK (SOT404A) |
SOT404A | 暫無信息 |
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| BUK761R5-40E | BUK761R5-40EJ | BUK761R5-40E |
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Series
文檔 (14)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BUK761R5-40E | N-channel TrenchMOS standard level FET | Data sheet | 2013-05-07 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN90063 | Questions about package outline drawings | Application note | 2025-03-12 |
| SOT404A | 3D model for products with SOT404A package | Design support | 2023-03-13 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT404A | plastic, single-ended surface-mounted package (D2PAK); 3 leads; 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body | Package information | 2022-05-27 |
| BUK761R5-40E | BUK761R5-40E Spice model | SPICE model | 2013-05-14 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
| BUK761R5-40E_RC_Thermal_Model | BUK761R5-40E Thermal design model | Thermal design | 2021-01-18 |
| BUK761R5-40E | BUK761R5-40E Thermal model | Thermal model | 2013-05-14 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BUK761R5-40E | BUK761R5-40E Spice model | SPICE model | 2013-05-14 |
| BUK761R5-40E_RC_Thermal_Model | BUK761R5-40E Thermal design model | Thermal design | 2021-01-18 |
| BUK761R5-40E | BUK761R5-40E Thermal model | Thermal model | 2013-05-14 |
| SOT404A | 3D model for products with SOT404A package | Design support | 2023-03-13 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.