可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷(xiāo)商處購(gòu)買(mǎi) |
|---|---|---|---|---|
| 74AUP1G38GX | 74AUP1G38GX,125 | 935298364125 | SOT1226-3 | 訂單產(chǎn)品 |
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more information74AUP1G38GX
Low-power 2-input NAND gate (open drain)
The 74AUP1G38 is a single 2-input NAND gate with open-drain output. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.
Features and benefits
Wide supply voltage range from 0.8 V to 3.6 V
CMOS low power dissipation
High noise immunity
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8C (2.7 V to 3.6 V)
Low static power consumption; ICC = 0.9 μA (maximum)
Latch-up performance exceeds 100 mA per JESD 78 Class II
Overvoltage tolerant inputs to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial Power-down mode operation
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
參數(shù)類(lèi)型
| 型號(hào) | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 74AUP1G38GX | 0.8?-?3.6 | CMOS | 1.9 | 8.5 | 70 | 1 | ultra low | -40~125 | 322 | 90.7 | 191 | X2SON5 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74AUP1G38GX | 74AUP1G38GX,125 (935298364125) |
Active | aB |
X2SON5 (SOT1226-3) |
SOT1226-3 | SOT1226-3_125 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74AUP1G38GX | 74AUP1G38GX,125 | 74AUP1G38GX |
|
|
Series
文檔 (8)
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| 74AUP1G38 | Low-power 2-input NAND gate (open drain) | Data sheet | 2023-07-18 |
| SOT1226-3 | 3D model for products with SOT1226-3 package | Design support | 2021-01-28 |
| aup1g38 | 74AUP1G38 IBIS model | IBIS model | 2014-12-14 |
| Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Leaflet | 2019-04-12 |
| Nexperia_document_leaflet_Logic_X2SON_packages_062018 | X2SON ultra-small 4, 5, 6 & 8-pin leadless packages | Leaflet | 2018-06-05 |
| SOT1226-3 | plastic thermal enhanced extremely thin small outline package; no leads;5 terminals; body 0.8 x 0.8 x 0.32 mm | Package information | 2020-08-27 |
| SOT1226-3_125 | X2SON5; Reel pack for SMD, 7''; Q3/T4 product orientation | Packing information | 2020-05-08 |
| 74AUP1G38GX_Nexperia_Product_Reliability | 74AUP1G38GX Nexperia Product Reliability | Quality document | 2024-06-16 |
支持
如果您需要設(shè)計(jì)/技術(shù)支持，請(qǐng)告知我們并填寫(xiě) 應(yīng)答表 我們會(huì)盡快回復(fù)您。
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買(mǎi) |
|---|---|---|---|---|---|---|
| 74AUP1G38GX | 74AUP1G38GX,125 | 935298364125 | Active | SOT1226-3_125 | 10,000 | 訂單產(chǎn)品 |
樣品
作為 Nexperia 的客戶，您可以通過(guò)我們的銷(xiāo)售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷(xiāo)商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷(xiāo)商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
74AUP1G38GX
Low-power 2-input NAND gate (open drain)
從安世半導(dǎo)體購(gòu)買(mǎi)
| SKU | 庫(kù)存* | MOQ | 單位價(jià)格 | 數(shù)量 |
|---|