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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認證產(chǎn)品(AEC-Q100/Q101)

74AVCH2T45GD

Dual-bit, dual-supply voltage level translator/transceiver; 3?-?state

The 74AVCH2T45 is a dual bit, dual supply transceiver that enables bidirectional level translation. It features two data input-output ports (nA and nB), a direction control input (DIR) and dual supply pins (VCC(A) and VCC(B)). Both VCC(A) and VCC(B) can be supplied at any voltage between 0.8 V and 3.6 V making the device suitable for translating between any of the low voltage nodes (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V and 3.3 V). Pins nA and DIR are referenced to VCC(A) and pins nB are referenced to VCC(B). A HIGH on DIR allows transmission from nA to nB and a LOW on DIR allows transmission from nB to nA.

The device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing any damaging backflow current through the device when it is powered down. In suspend mode when either VCC(A) or VCC(B) are at GND level, both A and B are in the high-impedance OFF-state.

The 74AVCH2T45 has active bus hold circuitry which is provided to hold unused or floating data inputs at a valid logic level. This feature eliminates the need for external pull-up or pull-down resistors.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range: 0.8 V to 3.6 V for VCC(A) and VCC(B)

  • High noise immunity

  • Suspend mode

  • Bus hold on data inputs

  • Inputs accept voltages up to 3.6 V

  • Low noise overshoot and undershoot < 10 % of VCC

  • IOFF circuitry provides partial Power-down mode operation

  • Maximum data rates:

    • 500 Mbps (1.8 V to 3.3 V translation)

    • 320 Mbps (< 1.8 V to 3.3 V translation)

    • 320 Mbps (translate to 2.5 V or 1.8 V)

    • 280 Mbps (translate to 1.5 V)

    • 240 Mbps (translate to 1.2 V)

  • Latch-up performance exceeds 100 mA per JESD 78 Class II

  • Complies with JEDEC standards:

    • JESD8-12 (0.8 V to 1.3 V)

    • JESD8-11 (0.9 V to 1.65 V)

    • JESD8-7 (1.2 V to 1.95 V)

    • JESD8-5 (1.8 V to 2.7 V)

    • JESD8-B (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3B exceeds 8000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

參數(shù)類型

型號 Package name
74AVCH2T45GD XSON8

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
74AVCH2T45GD 74AVCH2T45GD,125
(935288283125)
Obsolete K45 SOT996-2
XSON8
(SOT996-2)
SOT996-2 SOT996-2_125

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
74AVCH2T45GD 74AVCH2T45GD,125 74AVCH2T45GD rohs rhf rhf
品質(zhì)及可靠性免責聲明

文檔 (7)

文件名稱 標題 類型 日期
74AVCH2T45 Dual-bit, dual-supply voltage level translator/transceiver; 3?-?state Data sheet 2024-08-12
AN10161 PicoGate Logic footprints Application note 2002-10-29
AN90007 Pin FMEA for AVC family Application note 2018-11-30
Nexperia_document_guide_Logic_translators Nexperia Logic Translators Brochure 2021-04-12
avch2t45 74AVCH2T45 Ibis model IBIS model 2014-10-14
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT996-2 plastic, leadless extremely thin small outline package; 8 terminals; 0.5 mm pitch; 3 mm x 2 mm x 0.5 mm body Package information 2020-04-21

支持

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

文件名稱 標題 類型 日期
avch2t45 74AVCH2T45 Ibis model IBIS model 2014-10-14

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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