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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產(chǎn)品(AEC-Q100/Q101)

NPIC6C4894D-Q100

Power logic 12-bit shift register; open-drain outputs

The NPIC6C4894-Q100 is a 12-stage serial shift register. It has a storage latch associated with each stage for strobing data from the serial input (D) to the parallel open-drain outputs (QP0 to QP11). Data is shifted on positive-going clock (CP) transitions. The data in each shift register stage is transferred to the storage register when the latch enable (LE) input is HIGH. Data in the storage register drives the gate of the output extended-drain NMOS transistor whenever the output enable input (OE) is HIGH. A LOW on OE causes the outputs to assume a high-impedance OFF-state. Operation of the OE input does not affect the state of the registers. Two serial outputs (QS1 and QS2) are available for cascading a number of NIC6C4894-Q100 devices. Serial data is available at QS1 on positive-going clock edges to allow high-speed operation in cascaded systems with a fast clock rise time. The same serial data is available at QS2 on the next negative going clock edge. It is used for cascading NPIC6C4894-Q100 devices when the clock has a slow rise time. The open-drain outputs are 33 V/100 mA continuous current extended-drain NMOS transistors designed for use in systems that require moderate load power such as LEDs. Integrated voltage clamps in the outputs, provide protection against inductive transients. This protection makes the device suitable for power driver applications such as relays, solenoids and other low-current or medium-voltage loads.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

    • Specified from ?40 °C to +125 °C

  • Low RDSon

  • 12 Power EDNMOS transistor outputs of 100 mA continuous current

  • 250 mA current limit capability

  • Output clamping voltage 33 V

  • 30 mJ avalanche energy capability

  • Low power consumption

  • Latch-up performance exceeds 100 mA per JESD 78 Class II level A

  • ESD protection:

    • HBM AEC-Q100-002 revision D class H2 exceeds 2500 V

    • CDM AEC-Q100-011 revision C1 class C6 exceeds 1000 V

Applications

  • LED sign

  • Graphic status panel

  • Fault status indicator

參數(shù)類型

型號 Package name
NPIC6C4894D-Q100 SO20

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
NPIC6C4894D-Q100 NPIC6C4894D-Q100Y
(935302551518)
Withdrawn / End-of-life NPIC6C4894D SOT163-1
SO20
(SOT163-1)
SOT163-1 WAVE_BG-BD-1
SOT163-1_518
NPIC6C4894D-Q100J
(935302551118)
Obsolete NPIC6C4894D SOT163-1_118

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
NPIC6C4894D-Q100 NPIC6C4894D-Q100Y NPIC6C4894D-Q100 rohs rhf rhf
NPIC6C4894D-Q100 NPIC6C4894D-Q100J NPIC6C4894D-Q100 rohs rhf rhf
品質(zhì)及可靠性免責聲明

文檔 (9)

文件名稱 標題 類型 日期
NPIC6C4894_Q100 Power logic 12-bit shift register; open drain outputs Data sheet 2017-04-07
AN11537 Pin FMEA for NPIC Family Application note 2019-10-07
SOT163-1 3D model for products with SOT163-1 package Design support 2020-01-22
npic6c4894 NPIC6C4894 IBIS model IBIS model 2016-05-30
Nexperia_document_leaflet_Logic_NPIC_ShiftRegisters_201906 NPIC Logic Shift Registers Leaflet 2019-07-12
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT163-1 plastic, small outline package; 20 leads; 1.27 mm pitch; 12.8 mm x 7.5 mm x 2.65 mm body Package information 2024-11-15
NPIC6C4894D-Q100_Nexperia_Product_Reliability NPIC6C4894D-Q100 Nexperia Product Reliability Quality document 2024-06-16
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

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模型

文件名稱 標題 類型 日期
npic6c4894 NPIC6C4894 IBIS model IBIS model 2016-05-30
SOT163-1 3D model for products with SOT163-1 package Design support 2020-01-22

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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