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Click here for more informationPMCM650CUNE
20 V, Common Drain N-channel Trench MOSFET
N-channel enhancement mode common-drain dual Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
Features and benefits
Common-drain type for bi-directional current flow
Low threshold voltage
Ultra small package: 0.98 × 1.48 × 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Applications
Loadswitch
Battery Protection
Battery Management
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VGS [max] (V) | Tj [max] (°C) | QGD [typ] (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMCM650CUNE | WLCSP6_3-2 | WLCSP6 | End of life | N | 2 | 8 | 150 | 2.9 | 0.556 | 0.7 | N | 480 | 96 | 2017-11-08 |
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PMCM650CUNE | PMCM650CUNEZ (934070441023) |
Withdrawn / End-of-life |
WLCSP6 (WLCSP6_3-2) |
WLCSP6_3-2 | 暫無信息 |
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PMCM650CUNE | PMCM650CUNEZ | PMCM650CUNE |
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文檔 (9)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PMCM650CUNE | 20 V, Common Drain N-channel Trench MOSFET | Data sheet | 2017-11-08 |
| WLCSP6_3-2 | 3D model for products with WLCSP6_3-2 package | Design support | 2023-03-13 |
| nexperia_document_leaflet_WLCSP_201803 | Small-signal MOSFETs in WLCSP - Smallest size - lowest RDS(on) | Leaflet | 2018-04-25 |
| nexperia_document_leaflet_WLCSP_201803_CHN | WLCSP Chinese Translation | Leaflet | 2018-04-25 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| nexperia_document_leaflet_WLCSP_201803 | Small-signal MOSFETs in WLCSP - Smallest size - lowest RDS(on) | Leaflet | 2018-04-25 |
| nexperia_document_leaflet_WLCSP_201803_CHN | WLCSP Chinese Translation | Leaflet | 2018-04-25 |
| WLCSP6_3-2 | wafer level chip-size package; 6 bumps (3 x 2) | Package information | 2022-07-13 |
| PMCM650CUNE | PMCM650CUNE Spice model | SPICE model | 2018-07-02 |
支持
如果您需要設(shè)計(jì)/技術(shù)支持，請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PMCM650CUNE | PMCM650CUNE Spice model | SPICE model | 2018-07-02 |
| WLCSP6_3-2 | 3D model for products with WLCSP6_3-2 package | Design support | 2023-03-13 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PMCM650CUNE
20 V, Common Drain N-channel Trench MOSFET