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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74ALVC16244DL

2.5 V / 3.3 V 16-bit buffer/line driver; 3-state

The 74ALVC16244; 74ALVCH16244 is a 16-bit buffer/line driver with 3-state outputs. The device can be used as four 4-bit buffers, two 8-bit buffers or one 16-bit buffer. The device features four output enables (1OE, 2OE, 3OE and 4OE), each controlling four of the 3-state outputs. A HIGH on nOE causes the outputs to assume a high-impedance OFF-state.

Schmitt trigger action on all inputs makes the device tolerant of slow rise and fall times.

This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

The 74ALVCH16244 has active bus hold circuitry which is provided to hold unused or floating data inputs at a valid logic level. This feature eliminates the need for external pull-up or pull-down resistors.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 1.2 V to 3.6 V

  • CMOS low power consumption

  • MULTIBYTE? flow-through standard pin-out architecture

  • Low inductance multiple VCC and GND pins for minimum noise and ground bounce

  • Overvoltage tolerant inputs to 5.5 V(74ALVC16244 only)

  • Direct interface with TTL levels

  • IOFF circuitry provides partial Power-down mode operation

  • Bushold on all data inputs(74ALVCH16244 only)

  • Output drive capability 50 Ω transmission lines at 85 °C

  • Current drive ±24 mA at 3.0 V

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • Latch-up performance exceeds 2500 mA per JESD 78 Class II.A

  • Complies with JEDEC standards:

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8C/JESD36 (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
  • Specified from -40 °C to +85 °C

參數(shù)類型

型號 Package name
74ALVC16244DL SSOP48

PCB Symbol, Footprint and 3D Model

Model Name 描述

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74ALVC16244DL 74ALVC16244DL,118
(935187780118)
Withdrawn / End-of-life SOT370-1
SSOP48
(SOT370-1)
SOT370-1 SSOP-TSSOP-VSO-REFLOW
SSOP-TSSOP-VSO-WAVE
SOT370-1_118
74ALVC16244DL,112
(935187780112)
Obsolete 暫無信息

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學(xué)成分 RoHS RHF指示符
74ALVC16244DL 74ALVC16244DL,118 74ALVC16244DL rohs rhf rhf
74ALVC16244DL 74ALVC16244DL,112 74ALVC16244DL rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (7)

文件名稱 標(biāo)題 類型 日期
74ALVC_ALVCH16244 2.5 V / 3.3 V 16-bit buffer/line driver; 3-state Data sheet 2024-06-11
AN90063 Questions about package outline drawings Application note 2025-03-12
alvc16244 alvc16244 IBIS model IBIS model 2013-04-08
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT370-1 plastic, shrink small outline package; 48 leads; 0.635 mm pitch; 15.9 mm x 7.5 mm x 2.8 mm body Package information 2020-04-21
SSOP-TSSOP-VSO-REFLOW Footprint for reflow soldering Reflow soldering 2009-10-08
SSOP-TSSOP-VSO-WAVE Footprint for wave soldering Wave soldering 2009-10-08

支持

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

文件名稱 標(biāo)題 類型 日期
alvc16244 alvc16244 IBIS model IBIS model 2013-04-08

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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