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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認證產(chǎn)品(AEC-Q100/Q101)

74AVCH16244DGG

16-bit buffer/line driver; 3.6 V tolerant; 3-state

The 74AVCH16244 is a 16-bit non-inverting buffer/line driver with 3-state outputs. The device can be used as four 4-bit buffers, two 8-bit buffers or one 16-bit buffer. The 3?state outputs are controlled by the output enable inputs nOE. A HIGH on nOE causes the outputs to assume a high impedance OFF-state.

The 74AVCH16244 is designed to have an extremely fast propagation delay and a minimum amount of power consumption.

To ensure the high-impedance output state during power-up or power-down, nOE should be tied to VCC through a pull-up resistor (Live Insertion).

A dynamic controlled output (DCO) circuitry is implemented to support termination line drive during transient.

The 74AVCH16244 has active bus-hold circuitry to hold unused or floating data inputs at a valid logic level. This feature eliminates the need for external pull-up or pull-down resistors.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 1.2 V to 3.6 V

  • CMOS low power consumption

  • Low inductance multiple VCC and GND pins for minimum noise and ground bounce

  • Input/output tolerant up to 3.6 V

  • Dynamic controlled output (DCO) circuit dynamically changes the output impedance, resulting in noise reduction without speed degradation

  • Bus hold on all data inputs

  • Supports Live Insertion

  • Complies with JEDEC standards:

    • JESD8-7 (1.2 V to 1.95 V)

    • JESD8-5 (1.8 V to 2.7 V)

    • JESD8-1A (2.7 V to 3.6 V)

Applications

參數(shù)類型

型號 Package name
74AVCH16244DGG TSSOP48

PCB Symbol, Footprint and 3D Model

Model Name 描述

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
74AVCH16244DGG 74AVCH16244DGG,112
(935266778112)
Obsolete AVCH16244 Standard Procedure Standard Procedure SOT362-1
TSSOP48
(SOT362-1)
SOT362-1 SSOP-TSSOP-VSO-WAVE
暫無信息
74AVCH16244DGG,118
(935266778118)
Obsolete AVCH16244 Standard Procedure Standard Procedure SOT362-1_118
74AVCH16244DGG,512
(935266778512)
Obsolete AVCH16244 Standard Procedure Standard Procedure 暫無信息
74AVCH16244DGG,518
(935266778518)
Obsolete AVCH16244 Standard Procedure Standard Procedure 暫無信息

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學(xué)成分 RoHS RHF指示符
74AVCH16244DGG 74AVCH16244DGG,112 74AVCH16244DGG rohs rhf rhf
74AVCH16244DGG 74AVCH16244DGG,118 74AVCH16244DGG rohs rhf rhf
74AVCH16244DGG 74AVCH16244DGG,512 74AVCH16244DGG rohs rhf rhf
74AVCH16244DGG 74AVCH16244DGG,518 74AVCH16244DGG rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (7)

文件名稱 標題 類型 日期
74AVCH16244 16-bit buffer/line driver; 3.6 V tolerant; 3-state Data sheet 2018-02-20
AN90007 Pin FMEA for AVC family Application note 2018-11-30
SOT362-1 3D model for products with SOT362-1 package Design support 2020-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
TSSOP48_SOT362-1_mk plastic, thin shrink small outline package; 48 leads; 0.5 mm pitch; 12.8 mm x 6.1 mm x 1.2 mm body Marcom graphics 2017-01-28
SOT362-1 plastic thin shrink small outline package; 48 leads; body width 6.1 mm Package information 2024-01-05
SSOP-TSSOP-VSO-WAVE Footprint for wave soldering Wave soldering 2009-10-08

支持

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

文件名稱 標題 類型 日期
SOT362-1 3D model for products with SOT362-1 package Design support 2020-01-22

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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