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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74AXP2G3404GM

Low-power buffer and inverter

The 74AXP2G3404 is a single buffer and single inverter.

Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.

This device ensures very low static and dynamic power consumption across the entire VCC range from 0.7 V to 2.75 V. It is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 0.7 V to 2.75 V

  • Low input capacitance; CI = 0.5 pF (typical)

  • Low output capacitance; CO = 1.0 pF (typical)

  • Low dynamic power consumption; CPD = 2.4 pF at VCC = 1.2 V (typical)

  • Low static power consumption; ICC = 0.6 μA (85 °C maximum)

  • High noise immunity

  • Complies with JEDEC standard:
    • JESD8-12A.01 (1.1 V to 1.3 V)

    • JESD8-11A.01 (1.4 V to 1.6 V)

    • JESD8-7A (1.65 V to 1.95 V)

    • JESD8-5A.01 (2.3 V to 2.7 V)

  • ESD protection:
    • HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV

    • CDM JESD22-C101E exceeds 1000 V

  • Latch-up performance exceeds 100 mA per JESD 78 Class II

  • Inputs accept voltages up to 2.75 V

  • Low noise overshoot and undershoot < 10 % of VCC

  • IOFF circuitry provides partial Power-down mode operation

  • Multiple package options

  • Specified from -40 °C to +85 °C

參數(shù)類型

型號(hào) Package name
74AXP2G3404GM XSON6

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74AXP2G3404GM 74AXP2G3404GMH
(935306676125)
Withdrawn / End-of-life SOT886
XSON6
(SOT886)
SOT886 REFLOW_BG-BD-1
SOT886_125

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
74AXP2G3404GM 74AXP2G3404GMH 74AXP2G3404GM rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (12)

文件名稱 標(biāo)題 類型 日期
74AXP2G3404 Low-power buffer and inverter Data sheet 2017-03-30
Nexperia_document_guide_MiniLogic_MicroPak_201808 MicroPak leadless logic portfolio guide Brochure 2018-09-03
SOT886 3D model for products with SOT886 package Design support 2019-10-03
axp2g3404 74AXP2G3404 IBIS model IBIS model 2015-11-04
Nexperia_document_leaflet_Logic_AXP_technology_portfolio_201904 AXP – Extremely low-power logic technology portfolio Leaflet 2019-04-05
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DFN1410-6_SOT886_mk plastic, extremely thin small outline package; no leads; 6 terminals; 0.6 mm pitch; 1 mm x 1.45 mm x 0.5 mm body Marcom graphics 2017-01-28
XSON6_SOT886_mk plastic, extremely thin small outline package; no leads; 6 terminals; 0.6 mm pitch; 1 mm x 1.45 mm x 0.5 mm body Marcom graphics 2017-01-28
SOT886 plastic, leadless extremely thin small outline package; 6 terminals; 0.5 mm pitch; 1 mm x 1.45 mm x 0.5 mm body Package information 2022-06-01
74AXP2G3404GM_Nexperia_Product_Reliability 74AXP2G3404GM Nexperia Product Reliability Quality document 2025-03-20
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
MAR_SOT886 MAR_SOT886 Topmark Top marking 2013-06-03

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請(qǐng)告知我們并填寫(xiě) 應(yīng)答表 我們會(huì)盡快回復(fù)您。


Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

文件名稱 標(biāo)題 類型 日期
axp2g3404 74AXP2G3404 IBIS model IBIS model 2015-11-04
SOT886 3D model for products with SOT886 package Design support 2019-10-03

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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