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Click here for more information74AUP3G14GM
Low-power triple Schmitt trigger inverter
The 74AUP3G14 provides three inverting buffers with Schmitt trigger action which accept standard input signals. They are capable of transforming slowly changing input signals into sharply defined, jitter-free output signals.
This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.
The inputs switch at different points for positive and negative-going signals. The difference between the positive voltage VT+ and the negative voltage VT- is defined as the input hysteresis voltage VH.
Alternatives
Features and benefits
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Low static power consumption; ICC = 0.9 μA (maximum)
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial Power-down mode operation
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
Applications
- Wave and pulse shaper
- Astable multivibrator
- Monostable multivibrator
PCB Symbol, Footprint and 3D Model
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文檔 (3)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| AN11052 | Pin FMEA for AUP family | Application note | 2019-01-09 |
| aup3g14 | 74AUP3G14 IBIS model | IBIS model | 2015-12-14 |
| Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Leaflet | 2019-04-12 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| aup3g14 | 74AUP3G14 IBIS model | IBIS model | 2015-12-14 |
PCB Symbol, Footprint and 3D Model
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.