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Low-power dual 2-input NAND gate
The 74AUP2G00 provides dual 2-input NAND function.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing a damaging backflow current through the device when it is powered down.
Alternatives
Features and benefits
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
Low static power consumption; ICC = 0.9 μA (maximum)
Latch-up performance exceeds 100 mA per JESD78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial power-down mode operation
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
參數(shù)類型
| 型號(hào) | Package name |
|---|---|
| 74AUP2G00GD | XSON8 |
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購的器件編號(hào)，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74AUP2G00GD | 74AUP2G00GD,125 (935286841125) |
Obsolete | p00 Standard Procedure Standard Procedure |
XSON8 (SOT996-2) |
SOT996-2 | SOT996-2_125 |
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74AUP2G00GD | 74AUP2G00GD,125 | 74AUP2G00GD |
|
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Series
文檔 (7)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| 74AUP2G00 | Low-power dual 2-input NAND gate | Data sheet | 2024-08-12 |
| AN10161 | PicoGate Logic footprints | Application note | 2002-10-29 |
| AN11052 | Pin FMEA for AUP family | Application note | 2019-01-09 |
| aup2g00 | aup2g00 IBIS model | IBIS model | 2013-04-07 |
| Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Leaflet | 2019-04-12 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT996-2 | plastic, leadless extremely thin small outline package; 8 terminals; 0.5 mm pitch; 3 mm x 2 mm x 0.5 mm body | Package information | 2020-04-21 |
支持
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模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| aup2g00 | aup2g00 IBIS model | IBIS model | 2013-04-07 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
74AUP2G00GD
Low-power dual 2-input NAND gate
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