可訂購部件
| 型號(hào) | 可訂購的器件編號(hào) | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| 74HCT1G32GV | 74HCT1G32GV,125 | 935272009125 | SOT753 | 訂單產(chǎn)品 |
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Click here for more information74HCT1G32GV
2-input OR gate
The 74HC1G32; 74HCT1G32 is a single 2-input OR gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.
Alternatives
Features and benefits
Wide supply voltage range from 2.0 V to 6.0 V
Symmetrical output impedance
High noise immunity
CMOS low power dissipation
Balanced propagation delays
Latch-up performance exceeds 100 mA per JESD78 Class II Level B
Input levels:
For 74HC1G32: CMOS level
For 74HCT1G32: TTL level
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Complies with JEDEC standards:
JESD8C (2.7 V to 3.6 V)
JESD7A (2.0 V to 6.0 V)
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ESD protection
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Specified from -40° C to +85° C and from -40° C to +125° C
參數(shù)類型
| 型號(hào) | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 74HCT1G32GV | 4.5?-?5.5 | TTL | ± 2 | 10 | 36 | 1 | low | -40~125 | 220 | 33 | 131 | TSOP5 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
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封裝
| 型號(hào) | 可訂購的器件編號(hào)，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74HCT1G32GV | 74HCT1G32GV,125 (935272009125) |
Active | T32 |
TSOP5 (SOT753) |
SOT753 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT753_125 |
環(huán)境信息
| 型號(hào) | 可訂購的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74HCT1G32GV | 74HCT1G32GV,125 | 74HCT1G32GV |
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文檔 (12)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| 74HC_HCT1G32 | 2-input OR gate | Data sheet | 2024-06-24 |
| AN10161 | PicoGate Logic footprints | Application note | 2002-10-29 |
| AN11044 | Pin FMEA 74HC/74HCT family | Application note | 2019-01-09 |
| Nexperia_document_guide_MiniLogic_PicoGate_201901 | PicoGate leaded logic portfolio guide | Brochure | 2019-01-07 |
| SOT753 | 3D model for products with SOT753 package | Design support | 2019-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT753 | plastic, surface-mounted package; 5 leads; 0.95 mm pitch; 2.9 mm x 1.5 mm x 1 mm body | Package information | 2022-05-31 |
| SOT753_125 | TSOP5; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2020-04-21 |
| 74HCT1G32GV_Nexperia_Product_Reliability | 74HCT1G32GV Nexperia Product Reliability | Quality document | 2025-03-20 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| MAR_SOT753 | MAR_SOT753 Topmark | Top marking | 2013-06-03 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOT753 | 3D model for products with SOT753 package | Design support | 2019-01-22 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
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訂購、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| 74HCT1G32GV | 74HCT1G32GV,125 | 935272009125 | Active | SOT753_125 | 3,000 |
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樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.