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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節(jié)ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

NEX90015ADF-Q100

150 mA, 40 V ultra-low Iq (5.3 μA) low-dropout voltage regulator

The NEX90x15-Q100 device is a low-dropout (LDO) linear regulator designed for applications with input voltages of up to 40 V. It features a typical quiescent current (IQ) of only 5.3 μA at light load and a typical shutdown current (ISHUT) of 300 nA when disabled. This makes the device ideal for powering always-on components, such as microcontrollers (MCUs) and Controller Area Network (CAN) or Local Interconnect Network (LIN) transceivers in standby or CAN-wake systems.

In battery-powered automotive applications, low IQ and ISHUT are critical for saving energy and extending battery life. Always-on systems require ultra-low IQ across an extended temperature range to ensure sustained operation when the vehicle ignition is off. In CAN-wake systems or certain sleep modes, maintaining an ultralow ISHUT is essential to minimize battery consumption even when the system is in sleep or disabled mode.

The device features integrated protections for short circuit, over-current, and thermal shutdown. It operates within an ambient temperature range of -40 °C to 125 °C and a junction temperature range of -40 °C to 150 °C. Additionally, this device is available in an enhanced thermal package, HTSSOP8, wettable flank HWSON6 (DFN-6), and SOT23-5, SOT223-4.

Table 1. Device information
Part number Package Body size (nom)

NEX90515-Q100

HTSSOP8

 

3.0 mm x 3.0 mm

NEX90215-Q100

HWSON6

 

2.0 mm x 2.0 mm

NEX90015-Q100

SOT23-5

1

2.93 mm x 1.63 mm

SOT223-4

 

6.5 mm x 3.5 mm

1

Product preview

Features and benefits

  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1 (Tamb): -40 °C to 125 °C
    • Junction temperature (TJ): -40 °C to 150 °C
  • Input voltage range: 3 V to 40 V (45 V transient)
  • Output voltage range: 3.3 V and 5 V (fixed)
  • Output voltage accuracy: ±2% (max)
  • Maximum output current: 150 mA
  • Low dropout voltage:
    • 230 mV typical at 150 mA (VOUT = 5 V)
  • Low quiescent current (IQ):
    • 5.3 μA typical at light loads
    • 300 nA typical shutdown current
  • Stable with a wide range of ceramic output-stability cap:
    • ESR from 0.001 Ω to 2 Ω; output cap of 1 μF to 220 μF
  • Integrated various fault protections:
    • Thermal shutdown
    • Short-circuit and over-current protection
  • Package options:
    • HTSSOP8, RθJA= 62.3 °C/W
    • HWSON6, RθJA= 66.7 °C/W
    • SOT23-5, RθJA= 181 °C/W
    • SOT223-4, RθJA= 66.6 °C/W

Applications

  • Body control modules (BCM)

  • Automotive lighting

  • Automotive head units & cluster

  • Telematics control units

  • EV/HEV power train

Figure 1. Typical application

封裝

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
NEX90015ADF-Q100 NEX90015ADF-Q100Z
(935692232342)
Development N1A SOT8104-1
SOT23-5
(SOT8104-1)
SOT8104-1 暫無信息

環(huán)境信息

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
NEX90015ADF-Q100 NEX90015ADF-Q100Z NEX90015ADF-Q100 rohs rhf rhf
品質及可靠性免責聲明

文檔 (3)

文件名稱 標題 類型 日期
NEX90X15_Q100 150 mA, 40 V ultra-low Iq (5.3 μA) low-dropout voltage regulator Data sheet 2025-04-01
aaa-041322 application diagram Application diagram 2024-10-30
SOT8104-1 SOT23-5: 5 pins; 0.95 mm pitch; 2.926 mm x 1.626 mm x 1.25 mm body Package information 2025-01-09

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模型

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訂購、定價與供貨

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可訂購部件

型號 可訂購的器件編號 訂購代碼(12NC) 封裝 從經銷商處購買
NEX90015ADF-Q100 NEX90015ADF-Q100Z 935692232342 SOT8104-1 訂單產品
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