74AUP1G374GW-Q100

Low-power D-type flip-flop; positive-edge trigger; 3-state

Automotive qualified

The 74AUP1G374-Q100 is a single D??-??type flip?-?flop; positive?-?edge trigger (3?-?state). Schmitt?-?trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire V_CC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using I_OFF. The I_OFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.

Features and benefits

Automotive product qualification in accordance with AEC-Q100 (Grade 1)
- Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
CMOS low power dissipation
Complies with JEDEC standards:
- JESD8-12 (0.8 V to 1.3 V)
- JESD8-11 (0.9 V to 1.65 V)
- JESD8-7 (1.65 V to 1.95 V)
- JESD8-5 (2.3 V to 2.7 V)
- JESD8-B (2.7 V to 3.6 V)
Low static power consumption; I_CC = 0.9 μA (maximum)
Latch-up performance exceeds 100 mA per JESD 78 Class II
Overvoltage tolerant inputs to 3.6 V
Low noise overshoot and undershoot < 10 % of V_CC
I_OFF circuitry provides partial Power-down mode operation
ESD protection:
- HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V
- CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

參數(shù)類型

型號	V_CC (V)	Logic switching levels	Output drive capability (mA)	t_pd (ns)	f_max (MHz)	Power dissipation considerations	T_amb (°C)	R_th(j-a) (K/W)	Ψ_th(j-top) (K/W)	R_th(j-c) (K/W)	Package name
74AUP1G374GW-Q100	0.8?-?3.6	CMOS	± 1.9	7.9	400	ultra low	-40~125	264	38.6	153	TSSOP6

PCB Symbol, Footprint and 3D Model

Model Name	描述

封裝

型號	可訂購的器件編號，（訂購碼(12NC)）	狀態(tài)	標(biāo)示	封裝	外形圖	回流焊/波峰焊	包裝
74AUP1G374GW-Q100	74AUP1G374GW-Q100H (935300212125)	Active	aX	TSSOP6 (SOT363-2)	SOT363-2		SOT363-2_125

環(huán)境信息

型號	可訂購的器件編號	化學(xué)成分	RoHS	RHF指示符
74AUP1G374GW-Q100	74AUP1G374GW-Q100H	74AUP1G374GW-Q100

品質(zhì)及可靠性免責(zé)聲明

Series

文檔 (9)

文件名稱	標(biāo)題	類型	日期
74AUP1G374_Q100	Low-power D-type flip-flop; positive-edge trigger; 3-state	Data sheet	2023-07-14
AN10161	PicoGate Logic footprints	Application note	2002-10-29
AN11052	Pin FMEA for AUP family	Application note	2019-01-09
SOT363-2	3D model for products with SOT363-2 package	Design support	2023-02-02
aup1g374	aup1g374 IBIS model	IBIS model	2014-12-21
Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904	Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904	Leaflet	2019-04-12
SOT363-2	plastic thin shrink small outline package; 6 leads; body width 1.25 mm	Package information	2022-11-21
SOT363-2_125	TSSOP6 ; Reel pack for SMD, 7"; Q3/T4 product orientation	Packing information	2022-11-04
74AUP1G374GW-Q100_Nexperia_Product_Reliability	74AUP1G374GW-Q100 Nexperia Product Reliability	Quality document	2025-03-20

支持

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

模型

文件名稱	標(biāo)題	類型	日期
aup1g374	aup1g374 IBIS model	IBIS model	2014-12-21
SOT363-2	3D model for products with SOT363-2 package	Design support	2023-02-02

PCB Symbol, Footprint and 3D Model

Model Name	描述

訂購、定價(jià)與供貨

型號	Orderable part number	Ordering code (12NC)	狀態(tài)	包裝	Packing Quantity	在線購買
74AUP1G374GW-Q100	74AUP1G374GW-Q100H	935300212125	Active	SOT363-2_125	3,000	訂單產(chǎn)品

樣品

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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