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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74HCT573DB-Q100

Octal D-type transparent latch; 3-state

The 74HC573-Q100; 74HCT573-Q100 is an 8-bit D-type transparent latch with 3-state outputs. The device features latch enable (LE) and output enable (OE) inputs. When LE is HIGH, data at the inputs enter the latches. In this condition the latches are transparent, a latch output will change each time its corresponding D-input changes. When LE is LOW the latches store the information that was present at the inputs a set-up time preceding the HIGH-to-LOW transition of LE. A HIGH on OE causes the outputs to assume a high-impedance OFF-state. Operation of the OE input does not affect the state of the latches. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

    • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

  • Wide supply voltage range from 2.0 V to 6.0 V
  • CMOS low power dissipation
  • High noise immunity
  • Input levels:

    • For 74HC573-Q100: CMOS level

    • For 74HCT573-Q100: TTL level

  • Inputs and outputs on opposite sides of package allowing easy interface with microprocessors

  • Useful as input or output port for microprocessors and microcomputers

  • 3-state non-inverting outputs for bus-oriented applications

  • Common 3-state output enable input

  • Multiple package options

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • Complies with JEDEC standards:

    • JESD8C (2.7 V to 3.6 V)
    • JESD7A (2.0 V to 6.0 V)
  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • DHVQFN package with Side-Wettable Flanks enabling Automated Optical Inspection (AOI) of solder joints

參數(shù)類型

型號(hào) Package name
74HCT573DB-Q100 SSOP20

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購的器件編號(hào),(訂購碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74HCT573DB-Q100 74HCT573DB-Q100J
(935301414118)
Obsolete HCT573 SOT339-1
SSOP20
(SOT339-1)
SOT339-1 SSOP-TSSOP-VSO-WAVE
SOT339-1_118

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
74HCT573DB-Q100 74HCT573DB-Q100J 74HCT573DB-Q100 rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (8)

文件名稱 標(biāo)題 類型 日期
74HC_HCT573_Q100 Octal D-type transparent latch; 3-state Data sheet 2024-08-05
AN11044 Pin FMEA 74HC/74HCT family Application note 2019-01-09
AN90063 Questions about package outline drawings Application note 2025-03-12
hct573 74HCT573 IBIS model IBIS model 2020-12-08
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT339-1 plastic, shrink small outline package; 20 leads; 0.65 mm pitch; 7.2 mm x 5.3 mm x 2 mm body Package information 2020-04-21
HCT_USER_GUIDE HC/T User Guide User manual 1997-10-31
SSOP-TSSOP-VSO-WAVE Footprint for wave soldering Wave soldering 2009-10-08

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。


Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

文件名稱 標(biāo)題 類型 日期
hct573 74HCT573 IBIS model IBIS model 2020-12-08

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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