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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74LVC1G10GW-Q100

Single 3-input NAND gate

The 74LVC1G10-Q100 provides a low-power, low-voltage single 3-input NAND gate.

The inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device in a mixed 3.3 V and 5 V environment.

Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall time.

This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.

Features and benefits

  • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

    • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

  • Wide supply voltage range from 1.65 V to 5.5 V

  • High noise immunity

  • ±24 mA output drive (VCC = 3.0 V)

  • CMOS low power dissipation

  • Latch-up performance exceeds 250 mA

  • Direct interface with TTL levels

  • Inputs accept voltages up to 5 V

  • IOFF circuitry provides partial Power-down mode operation

  • Complies with JEDEC standard:

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8C (2.7 V to 3.6 V)

    • JESD36 (4.5 V to 5.5 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

參數(shù)類型

型號 VCC (V) Logic switching levels Output drive capability (mA) tpd (ns) fmax (MHz) Nr of bits Power dissipation considerations Tamb (°C) Rth(j-a) (K/W) Ψth(j-top) (K/W) Rth(j-c) (K/W) Package name
74LVC1G10GW-Q100 1.65?-?5.5 CMOS/LVTTL ± 32 2.6 175 1 low -40~125 284 56.2 172 TSSOP6

PCB Symbol, Footprint and 3D Model

Model Name 描述

封裝

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74LVC1G10GW-Q100 74LVC1G10GW-Q100H
(935309202125)
Active YM SOT363-2
TSSOP6
(SOT363-2)
SOT363-2 SOT363-2_125

環(huán)境信息

型號 可訂購的器件編號 化學(xué)成分 RoHS RHF指示符
74LVC1G10GW-Q100 74LVC1G10GW-Q100H 74LVC1G10GW-Q100 rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (8)

文件名稱 標(biāo)題 類型 日期
74LVC1G10_Q100 Single 3-input NAND gate Data sheet 2023-08-14
AN10161 PicoGate Logic footprints Application note 2002-10-29
AN11009 Pin FMEA for LVC family Application note 2019-01-09
SOT363-2 3D model for products with SOT363-2 package Design support 2023-02-02
lvc1g10 74LVC1G10 IBIS model IBIS model 2014-10-20
SOT363-2 plastic thin shrink small outline package; 6 leads; body width 1.25 mm Package information 2022-11-21
SOT363-2_125 TSSOP6 ; Reel pack for SMD, 7"; Q3/T4 product orientation Packing information 2022-11-04
74LVC1G10GW-Q100_Nexperia_Product_Reliability 74LVC1G10GW-Q100 Nexperia Product Reliability Quality document 2024-06-16

支持

如果您需要設(shè)計/技術(shù)支持,請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類型 日期
lvc1g10 74LVC1G10 IBIS model IBIS model 2014-10-20
SOT363-2 3D model for products with SOT363-2 package Design support 2023-02-02

PCB Symbol, Footprint and 3D Model

Model Name 描述

訂購、定價與供貨

型號 Orderable part number Ordering code (12NC) 狀態(tài) 包裝 Packing Quantity 在線購買
74LVC1G10GW-Q100 74LVC1G10GW-Q100H 935309202125 Active SOT363-2_125 3,000 訂單產(chǎn)品

樣品

作為 Nexperia 的客戶,您可以通過我們的銷售機構(gòu)訂購樣品。

如果您沒有 Nexperia 的直接賬戶,我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可訂購部件

型號 可訂購的器件編號 訂購代碼(12NC) 封裝 從經(jīng)銷商處購買
74LVC1G10GW-Q100 74LVC1G10GW-Q100H 935309202125 SOT363-2 訂單產(chǎn)品
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