可訂購部件
| 型號(hào) | 可訂購的器件編號(hào) | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| PBSS302PD | PBSS302PD,115 | 934059132115 | SOT457 | 訂單產(chǎn)品 |
| PBSS302PD | PBSS302PDH | 934059132125 | SOT457 | 訂單產(chǎn)品 |
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Click here for more informationPBSS302PD
40 V, 4 A PNP low VCEsat transistor
PNP low VCEsat transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS302ND
Features and benefits
Ultra low collector-emitter saturation voltage VCEsat
4 A continuous collector current capability IC
Up to 15 A peak current
Very low collector-emitter saturation resistance
High efficiency due to less heat generation
Applications
Power management functions
Charging circuits
DC-to-DC conversion
MOSFET gate driving
Power switches (e.g. motors, fans)
參數(shù)類型
| 型號(hào) | Package version | Package name | Size (mm) | channel type (e) | Ptot (mW) | VCEO [max] (V) | IC [max] (mA) | hFE [min] | TJ [max] (°C) |
|---|---|---|---|---|---|---|---|---|---|
| PBSS302PD | SOT457 | TSOP6 | 2.9 x 1.5 x 1 | PNP | 360.0 | -40.0 | -4000.0 | 200.0 | 150 |
封裝
| 型號(hào) | 可訂購的器件編號(hào)，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PBSS302PD | PBSS302PD,115 (934059132115) |
Active | C9 |
TSOP6 (SOT457) |
SOT457 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT457_115 |
| PBSS302PDH (934059132125) |
Active | C9 | SOT457_125 |
環(huán)境信息
| 型號(hào) | 可訂購的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PBSS302PD | PBSS302PD,115 | PBSS302PD |
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| PBSS302PD | PBSS302PDH | PBSS302PD |
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文檔 (15)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PBSS302PD | 40 V, 4 A PNP low V_CEsat (BISS) transistor | Data sheet | 2025-04-14 |
| AN11076 | Thermal behavior of small-signal discretes on multilayer PCBs | Application note | 2021-06-23 |
| AN90063 | Questions about package outline drawings | Application note | 2025-06-13 |
| Nexperia_document_guide_MiniLogic_PicoGate_201901 | PicoGate leaded logic portfolio guide | Brochure | 2019-01-07 |
| SOT457 | 3D model for products with SOT457 package | Design support | 2022-11-04 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| TSOP6_SOT457_mk | plastic, surface-mounted package (TSOP6); 6 leads; 0.95 mm pitch; 2.9 mm x 1.5 mm x 1 mm body | Marcom graphics | 2017-01-28 |
| SOT457 | plastic, surface-mounted package (SC-74; TSOP6); 6 leads | Package information | 2023-03-03 |
| SOT457_115 | TSOP6; Reel pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2020-06-12 |
| SOT457_125 | TSOP6; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2020-04-21 |
| PBSS302PD_Nexperia_Product_Reliability | PBSS302PD Nexperia Product Reliability | Quality document | 2025-05-27 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PBSS302PD | PBSS302PD SPICE model | SPICE model | 2025-05-31 |
| MAR_SOT457 | MAR_SOT457 Topmark | Top marking | 2013-06-03 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
訂購、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PBSS302PD | PBSS302PD,115 | 934059132115 | Active | SOT457_115 | 3,000 |
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| PBSS302PD | PBSS302PDH | 934059132125 | Active | SOT457_125 | 3,000 |
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樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.