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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

50 - 55 VDS for 36 V motors

Optimised SOA, high ID rating and excellent avalanche capability

There is growing demand for 36 V DC motors, often being used with multi-cell lithium-ion battery packs, in an increasing range of applications. From cordless power tools to outdoor power equipment and even e-bikes and scooters. To drive these demanding applications safely and efficiently requires MOSFETs that have been optimized for high current, strong SOA and rugged avalanche rating.

ASFETs for DC motor control – 50/55V ASFETs are designed to meet the needs of 36 V motors:

  • Nexperia’s Superjunction technology provides an enhanced Safe Operating Area (SOA) to withstand power dissipation due to short-circuit faults
  • ID(max), enabling maximum torque from the motor and reliably managing high load and stall current conditions
  • Potential UIS (unclamped inductive spiking) energy dissipation 20% lower than a comparable 60 V MOSFETs
  • Nexperia’s low RDS(on) characteristics deliver higher efficiencies, ensuring longer battery life
  • As with all motor applications, there is a level of system vibration that cannot be dampened. LFPAK brings a unique level of board level reliability and ruggedness.
  • Devices are offered in logic level allowing them to be switched directly from a 5 V gate drive

參數(shù)搜索

50 - 55 VDS for 36 V motors
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產(chǎn)品

型號 描述 狀態(tài) 快速訪問
PSMN1R2-55SLH N-channel 55 V, 1.03 mOhm, 330 A logic level Application Specific MOSFET in LFPAK88 Production
PSMN1R5-50YLH N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E Production
PSMN2R0-55YLH N-channel 55 V, 2.1 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E Production
PSMNR90-50SLH N-channel 50 V, 0.90 mOhm, 410 A logic level Application Specific MOSFET in LFPAK88 Production
Visit our documentation center for all documentation

Application note (11)

文件名稱 標(biāo)題 類型 日期
AN90001.pdf Designing in MOSFETs for safe and reliable gate-drive operation Application note 2024-10-28
AN11160.pdf Designing RC Snubbers Application note 2024-10-21
AN10273.pdf Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN50006.pdf Power MOSFETs in linear mode Application note 2022-04-12
AN11261.pdf RC Thermal Models Application note 2021-03-18
AN11158_ZH.pdf Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN90016.pdf Maximum continuous currents in NEXPERIA LFPAK power MOSFETs Application note 2020-09-03
AN90019.pdf LFPAK MOSFET thermal resistance - simulation, test and optimization of PCB layout Application note 2020-07-20
AN11158.pdf Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11243.pdf Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11599.pdf Using power MOSFETs in parallel Application note 2016-07-13

Marcom graphics (1)

文件名稱 標(biāo)題 類型 日期
RS3301_50_55V-scr.jpg hedge trimmer image Marcom graphics 2021-06-16

Selection guide (1)

文件名稱 標(biāo)題 類型 日期
Nexperia_Selection_guide_2023.pdf Nexperia Selection Guide 2023 Selection guide 2023-05-10

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