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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74ALVCH16373DL

2.5 V/3.3 V 16-bit D-type transparent latch; 3-state

The 74ALVCH16373 is a 16-bit D-type transparent latch with bus hold inputs and 3-state outputs. The device can be used as two 8-bit transparent latches or a single 16-bit transparent latch. The device features two latch enables (1LE and 2LE) and two output enables (1OE and 2OE), each controlling 8-bits. When nLE is HIGH, data at the inputs enter the latches. In this condition the latches are transparent, a latch output will change each time its corresponding D-input changes. When nLE is LOW the latches store the information that was present at the inputs a set-up time preceding the HIGH-to-LOW transition of nLE. A HIGH on nOE causes the outputs to assume a high-impedance OFF-state. Operation of the nOE input does not affect the state of the latches.

This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 1.2 V to 3.6 V

  • CMOS low power dissipation

  • MULTIBYTE? flow-through standard pin-out architecture

  • Low inductance multiple VCC and GND pins for minimum noise and ground bounce

  • Direct interface with TTL levels

  • All data inputs have bus hold

  • Latch-up performance exceeds 100 mA per JESD78 Class II.A

  • Output drive capability 50 ? transmission lines at 85 °C

  • Current drive ±24 mA at VCC = 3.0 V

  • Complies with JEDEC standards:
    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8C/JESD36 (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
  • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

參數(shù)類型

型號(hào) Package name
74ALVCH16373DL SSOP48

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74ALVCH16373DL 74ALVCH16373DL,112
(935260443112)
Obsolete ALVCH16373 Standard Procedure Standard Procedure SOT370-1
SSOP48
(SOT370-1)
SOT370-1 SSOP-TSSOP-VSO-REFLOW
SSOP-TSSOP-VSO-WAVE
暫無信息
74ALVCH16373DL,118
(935260443118)
Obsolete ALVCH16373 Standard Procedure Standard Procedure SOT370-1_118

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
74ALVCH16373DL 74ALVCH16373DL,112 74ALVCH16373DL rohs rhf rhf
74ALVCH16373DL 74ALVCH16373DL,118 74ALVCH16373DL rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (7)

文件名稱 標(biāo)題 類型 日期
74ALVCH16373 2.5 V/3.3 V 16-bit D-type transparent latch; 3-state Data sheet 2024-06-18
AN90063 Questions about package outline drawings Application note 2025-03-12
alvch16373 alvch16373 IBIS model IBIS model 2013-04-08
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT370-1 plastic, shrink small outline package; 48 leads; 0.635 mm pitch; 15.9 mm x 7.5 mm x 2.8 mm body Package information 2020-04-21
SSOP-TSSOP-VSO-REFLOW Footprint for reflow soldering Reflow soldering 2009-10-08
SSOP-TSSOP-VSO-WAVE Footprint for wave soldering Wave soldering 2009-10-08

支持

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

文件名稱 標(biāo)題 類型 日期
alvch16373 alvch16373 IBIS model IBIS model 2013-04-08

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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