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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產(chǎn)品(AEC-Q100/Q101)

74AUP1G00GX

Low-power 2-input NAND gate

The 74AUP1G00 is a single 2-input NAND gate. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.

Features and benefits

  • Wide supply voltage range from 0.8 V to 3.6 V

  • CMOS low power dissipation

  • High noise immunity

  • Complies with JEDEC standards:

    • JESD8-12 (0.8 V to 1.3 V)

    • JESD8-11 (0.9 V to 1.65 V)

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8C (2.7 V to 3.6 V)

  • Low static power consumption; ICC = 0.9 μA (maximum)

  • Latch-up performance exceeds 100 mA per JESD 78 Class II

  • Overvoltage tolerant inputs to 3.6 V

  • Low noise overshoot and undershoot < 10 % of VCC

  • IOFF circuitry provides partial Power-down mode operation

  • Multiple package options

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

參數(shù)類型

型號 VCC (V) Logic switching levels Output drive capability (mA) tpd (ns) fmax (MHz) Nr of bits Power dissipation considerations Tamb (°C) Rth(j-a) (K/W) Ψth(j-top) (K/W) Rth(j-c) (K/W) Package name
74AUP1G00GX 0.8?-?3.6 CMOS ± 1.9 8.3 70 1 ultra low -40~125 322 90.7 191 X2SON5

封裝

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
74AUP1G00GX 74AUP1G00GX,125
(935298353125)
Active pA SOT1226-3
X2SON5
(SOT1226-3)
SOT1226-3 SOT1226-3_125

環(huán)境信息

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
74AUP1G00GX 74AUP1G00GX,125 74AUP1G00GX rohs rhf rhf
品質(zhì)及可靠性免責聲明

文檔 (8)

文件名稱 標題 類型 日期
74AUP1G00 Low-power 2-input NAND gate Data sheet 2024-09-19
SOT1226-3 3D model for products with SOT1226-3 package Design support 2021-01-28
aup1g00 74AUP1G00 IBIS model IBIS model 2014-12-04
Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Leaflet 2019-04-12
Nexperia_document_leaflet_Logic_X2SON_packages_062018 X2SON ultra-small 4, 5, 6 & 8-pin leadless packages Leaflet 2018-06-05
SOT1226-3 plastic thermal enhanced extremely thin small outline package; no leads;5 terminals; body 0.8 x 0.8 x 0.32 mm Package information 2020-08-27
SOT1226-3_125 X2SON5; Reel pack for SMD, 7''; Q3/T4 product orientation Packing information 2020-05-08
74AUP1G00GX_Nexperia_Product_Reliability 74AUP1G00GX Nexperia Product Reliability Quality document 2024-06-16

支持

如果您需要設計/技術(shù)支持,請告知我們并填寫 應答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
aup1g00 74AUP1G00 IBIS model IBIS model 2014-12-04
SOT1226-3 3D model for products with SOT1226-3 package Design support 2021-01-28

訂購、定價與供貨

型號 Orderable part number Ordering code (12NC) 狀態(tài) 包裝 Packing Quantity 在線購買
74AUP1G00GX 74AUP1G00GX,125 935298353125 Active SOT1226-3_125 10,000 訂單產(chǎn)品

樣品

作為 Nexperia 的客戶,您可以通過我們的銷售機構(gòu)訂購樣品。

如果您沒有 Nexperia 的直接賬戶,我們的全球和地區(qū)分銷商網(wǎng)絡可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可訂購部件

型號 可訂購的器件編號 訂購代碼(12NC) 封裝 從經(jīng)銷商處購買
74AUP1G00GX 74AUP1G00GX,125 935298353125 SOT1226-3 訂單產(chǎn)品
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